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2SK3469-01MR 数据表(PDF) 2 Page - Fuji Electric

部件名 2SK3469-01MR
功能描述  N CHANNEL SILICON POWER MOSFET
Download  4 Pages
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制造商  FUJI [Fuji Electric]
网页  http://www.fujielectric.co.jp/eng/fdt/scd
标志 FUJI - Fuji Electric

2SK3469-01MR 数据表(HTML) 2 Page - Fuji Electric

  2SK3469-01MR Datasheet HTML 1Page - Fuji Electric 2SK3469-01MR Datasheet HTML 2Page - Fuji Electric 2SK3469-01MR Datasheet HTML 3Page - Fuji Electric 2SK3469-01MR Datasheet HTML 4Page - Fuji Electric  
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background image
2
0
5
10
15
20
25
30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
7.0V
VGS=6.5V
01234
56789
10
0.1
1
10
VGS[V]
Typical Transfer Characteristic
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
20V
10V
8V
7.5V
7.0V
VDS [V]
Typical Output Characteristics
VGS=6.5V
Characteristics
2SK3469-01MR
FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.1
1
10
0.1
1
10
100
ID [A]
Typical Transconductance
0
25
50
75
100
125
150
0
10
20
30
40
50
60
Allowable Power Dissipation
PD=f(Tc)
Tc [
°C]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I(AV)<=12A


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