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LM3046 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LM3046
功能描述  LM3045/LM3046/LM3086 Transistor Arrays
Download  6 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LM3046 数据表(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (TA e 25 C)
If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales Office
Distributors for availability and specifications
LM3045
LM3046LM3086
Each
Total
Each
Total
Units
Transistor
Package
Transistor
Package
Power Dissipation
TA e 25 C
300
750
300
750
mW
TA e 25 Cto55 C
300
750
mW
TA l 55 C
Derate at 667
mW C
TA e 25 Cto75 C
300
750
mW
TA l 75 C
Derate at 8
mW C
Collector to Emitter Voltage VCEO
15
15
V
Collector to Base Voltage VCBO
20
20
V
Collector to Substrate Voltage VCIO (Note 1)
20
20
V
Emitter to Base Voltage VEBO
55
V
Collector Current IC
50
50
mA
Operating Temperature Range
b
55 Cto a125 C
b
40 Cto a85 C
Storage Temperature Range
b
65 Cto a150 C
b
65 Cto a85 C
Soldering Information
Dual-In-Line Package Soldering (10 Sec)
260 C
260 C
Small Outline Package
Vapor Phase (60 Seconds)
215 C
Infrared (15 Seconds)
220 C
See AN-450 ‘‘Surface Mounting Methods and Their Effect on Product Reliability’’ for other methods of soldering surface mount
devices
Electrical Characteristics (TA e 25 C unless otherwise specified)
Limits
Limits
Parameter
Conditions
LM3045 LM3046
LM3086
Units
Min
Typ
Max
Min
Typ
Max
Collector to Base Breakdown Voltage (V(BR)CBO)IC e 10 mA IE e 0
2060
2060
V
Collector to Emitter Breakdown Voltage (V(BR)CEO)IC e 1 mA IB e 0
1524
1524
V
Collector to Substrate Breakdown
IC e 10 mA ICI e 0
20
60
20
60
V
Voltage (V(BR)CIO)
Emitter to Base Breakdown Voltage (V(BR)EBO)IE 10 mA IC e 05
7
5
7
V
Collector Cutoff Current (ICBO)VCB e 10V IE e 0
0002
40
0002
100
nA
Collector Cutoff Current (ICEO)VCE e 10V IB e 0
05
5
m
A
Static Forward Current Transfer
VCE e 3V
IC e 10 mA
100
100
Ratio (Static Beta) (hFE)
IC e 1 mA
40
100
40
100
IC e 10 mA
54
54
Input Offset Current for Matched
VCE e 3V IC e 1mA
03
2
m
A
Pair Q1 and Q2
lIO1 b IIO2l
Base to Emitter Voltage (VBE)VCE e 3V
IE e 1mA
0715
0715
V
IE e 10 mA
0800
0800
Magnitude of Input Offset Voltage for
VCE e 3V IC e 1mA
045
5
mV
Differential Pair
lVBE1 b VBE2l
Magnitude of Input Offset Voltage for Isolated
VCE e 3V IC e 1mA
Transistors
lVBE3 b VBE4l lVBE4 b VBE5l
045
5
mV
lVBE5 b VBE3l
Temperature Coefficient of Base to
VCE e 3V IC e 1mA
Emitter Voltage
DVBE
D
T
J
b
19
b
19
mV C
Collector to Emitter Saturation Voltage (VCE(SAT))IB e 1 mA IC e 10 mA
023
023
V
Temperature Coefficient of
VCE e 3V IC e 1mA
Input Offset Voltage
DV10
D
T
J
11
m
V C
Note 1
The collector of each transistor of the LM3045 LM3046 and LM3086 is isolated from the substrate by an integral diode The substrate (terminal 13) must
be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action
2


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