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STPSC20065-Y 数据表(PDF) 1 Page - STMicroelectronics |
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STPSC20065-Y 数据表(HTML) 1 Page - STMicroelectronics |
1 / 11 page May 2016 DocID029260 Rev 1 1/11 This is information on a product in full production. www.st.com STPSC20065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Features No reverse recovery charge in application current range Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability ECOPACK®2 compliant component AEC-Q101 qualified PPAP capable Operating Tj from -40 °C to 175 °C Description The SiC diode is a high voltage power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Used as a freewheeling or output rectification diode, this rectifier will enhance the performance and form factor of the targeted power supply or inverter. Table 1: Device summary Symbol Value IF(AV) 20 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.30 V A K A K K DO-247 A K TO-220AC |
类似零件编号 - STPSC20065-Y |
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类似说明 - STPSC20065-Y |
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