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STF13N60DM2 数据表(PDF) 1 Page - STMicroelectronics |
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STF13N60DM2 数据表(HTML) 1 Page - STMicroelectronics |
1 / 13 page December 2016 DocID029201 Rev 2 1/13 This is information on a product in full production. www.st.com STF13N60DM2 N- channel 600 V, 0.310 Ω typ., 11 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID STF13N60DM2 600 V 0.365 Ω 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STF13N60DM2 13N60DM2 TO-220FP Tube TO-220FP D(2, TAB) G(1) S(3) AM01476v1_tab |
类似零件编号 - STF13N60DM2 |
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类似说明 - STF13N60DM2 |
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