STF10N60DM2 datasheet(3/12 Pages) STMICROELECTRONICS

部件名	STF10N60DM2

功能描述	N-channel 600 V, 0.440 (ohm) typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package

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制造商	STMICROELECTRONICS [STMicroelectronics]

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STF10N60DM2

Electrical ratings

DocID029381 Rev 1

3/12

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

V

ID

Drain current (continuous) at Tcase = 25 °C

8

A

Drain current (continuous) at Tcase = 100 °C

5

IDM(1)

Drain current (pulsed)

32

A

PTOT

Total dissipation at Tcase = 25 °C

25

W

dv/dt(2)

Peak diode recovery voltage slope

40

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

50

VISO(4)

Insulation withstand voltage (RMS) from all three leads to

external heat sink

2.5

kV

Tstg

Storage temperature range

-55 to 150

°C

Tj

Operating junction temperature range

Notes:

(1) Pulse width is limited by safe operating area.

(2) ISD ≤ 8 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V

(3) VDS ≤ 480 V.

(4)t = 1 s; TC = 25 °C

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

5

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR(1)

Avalanche current, repetitive or not repetitive

2

A

EAS(2)

Single pulse avalanche energy

300

mJ

Notes:

(1) pulse width limited by Tjmax

(2) starting Tj = 25 °C, ID = IAR, VDD = 50 V.

类似零件编号 - STF10N60DM2

制造商	部件名	数据表	功能描述
STMicroelectronics	STF10N60M2	657Kb / 13P	Extremely low gate charge March 2017 Rev 4

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类似说明 - STF10N60DM2

制造商	部件名	数据表	功能描述
STMicroelectronics	STD10N60DM2	813Kb / 14P	N-channel 600 V, 0.440 廓 typ., 8 A MDmesh??DM2 Power MOSFET in a DPAK package June 2016 Rev 1
	STF11N60DM2	713Kb / 12P	N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220FP package
	STF13N60DM2	719Kb / 13P	N-channel 600 V, 0.310 (ohm) typ., 11 A MDmesh DM2 Power MOSFET in a TO-220FP package
	STF18N60DM2	456Kb / 12P	N-channel 600 V, 0.260 typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP package June 2019 Rev 5
	STF43N60DM2	418Kb / 13P	N-channel 600 V, 0.085 廓 typ., 34 A MDmesh??DM2 Power MOSFET in a TO-220FP package July 2015 Rev 2
	STF6N60DM2	298Kb / 12P	N-channel 600 V, 0.95 typ., 5 A MDmesh™ DM2 Power MOSFET in a TO-220FP package March 2020 Rev 3
	STF28N60DM2	717Kb / 12P	N-channel 600 V, 0.13 廓 typ., 21 A MDmesh??DM2 Power MOSFET in a TO-220FP package October 2015 Rev 2
	STD8N60DM2	823Kb / 15P	N-channel 600 V, 550 m(ohm) typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
	STD5N60DM2	817Kb / 15P	N-channel 600 V, 1.38 (ohm) typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package
	STP11N60DM2	716Kb / 12P	N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a TO-220 package

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STF10N60DM2 数据表(PDF) 3 Page - STMicroelectronics

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