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STF10N60DM2 数据表(PDF) 3 Page - STMicroelectronics |
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STF10N60DM2 数据表(HTML) 3 Page - STMicroelectronics |
3 / 12 page STF10N60DM2 Electrical ratings DocID029381 Rev 1 3/12 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID Drain current (continuous) at Tcase = 25 °C 8 A Drain current (continuous) at Tcase = 100 °C 5 IDM(1) Drain current (pulsed) 32 A PTOT Total dissipation at Tcase = 25 °C 25 W dv/dt(2) Peak diode recovery voltage slope 40 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 VISO(4) Insulation withstand voltage (RMS) from all three leads to external heat sink 2.5 kV Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range Notes: (1) Pulse width is limited by safe operating area. (2) ISD ≤ 8 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V (3) VDS ≤ 480 V. (4)t = 1 s; TC = 25 °C Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR(1) Avalanche current, repetitive or not repetitive 2 A EAS(2) Single pulse avalanche energy 300 mJ Notes: (1) pulse width limited by Tjmax (2) starting Tj = 25 °C, ID = IAR, VDD = 50 V. |
类似零件编号 - STF10N60DM2 |
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类似说明 - STF10N60DM2 |
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