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KMB9Z24 数据表(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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KMB9Z24 数据表(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 4 page KMB9Z24 KERSMI ELECTRONIC CO.,LTD. -55V P-channel MOSFET www.kersemi.com 1 Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features 1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. TO-263 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage --55 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 -12 A Continuous Drain Current-T=100℃ -8.5 Pulsed Drain Current2 -48 EAS Single Pulse Avalanche Energy3 96 mJ PD Power Dissipation4 45 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics BVDSS RDSON ID -55V 0.175Ω -12A Symbol Parameter Ratings Units RƟJC Thermal Resistance ,Junction to Case1 3.3 ℃/W RƟJA Thermal Resistance, Junction to Ambient1 40 |
类似零件编号 - KMB9Z24 |
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类似说明 - KMB9Z24 |
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