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KMB9Z24 数据表(PDF) 1 Page - Kersemi Electronic Co., Ltd.

部件名 KMB9Z24
功能描述  Advanced high cell denity trench technology for ultra RDS(ON)
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制造商  KERSEMI [Kersemi Electronic Co., Ltd.]
网页  http://www.kersemi.com
标志 KERSEMI - Kersemi Electronic Co., Ltd.

KMB9Z24 数据表(HTML) 1 Page - Kersemi Electronic Co., Ltd.

  KMB9Z24 Datasheet HTML 1Page - Kersemi Electronic Co., Ltd. KMB9Z24 Datasheet HTML 2Page - Kersemi Electronic Co., Ltd. KMB9Z24 Datasheet HTML 3Page - Kersemi Electronic Co., Ltd. KMB9Z24 Datasheet HTML 4Page - Kersemi Electronic Co., Ltd.  
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KMB9Z24
KERSMI ELECTRONIC CO.,LTD.
-55V P-channel MOSFET
www.kersemi.com
1
Description
This P-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
TO-263
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
--55
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current-1
-12
A
Continuous Drain Current-T=100℃
-8.5
Pulsed Drain Current2
-48
EAS
Single Pulse Avalanche Energy3
96
mJ
PD
Power Dissipation4
45
W
TJ, TSTG
Operating and Storage Junction Temperature
Range
-55 to
+175
Thermal Characteristics
BVDSS
RDSON
ID
-55V
0.175Ω
-12A
Symbol
Parameter
Ratings
Units
RƟJC
Thermal Resistance ,Junction to Case1
3.3
℃/W
RƟJA
Thermal Resistance, Junction to Ambient1
40


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