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IRF7313 数据表(PDF) 2 Page - International Rectifier |
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IRF7313 数据表(HTML) 2 Page - International Rectifier |
2 / 7 page IRF7313 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 0.78 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V trr Reverse Recovery Time 45 68 ns TJ = 25°C, IF = 1.7A Qrr Reverse RecoveryCharge 58 87nC di/dt = 100A/µs Source-Drain Ratings and Characteristics 30 2.5 A S D G
Surface mounted on FR-4 board, t ≤ 10sec. Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.022 V/°C Reference to 25°C, ID = 1mA 0.023 0.029 VGS = 10V, ID = 5.8A 0.032 0.046 VGS = 4.5V, ID = 4.7A VGS(th) Gate Threshold Voltage 1.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 14 S VDS = 15V, ID = 5.8A 1.0 VDS = 24V, VGS = 0V 25 VDS = 24V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage 100 VGS = 20V Gate-to-Source Reverse Leakage -100 VGS = -20V Qg Total Gate Charge 22 33 ID = 5.8A Qgs Gate-to-Source Charge 2.6 3.9 nC VDS = 15V Qgd Gate-to-Drain ("Miller") Charge 6.4 9.6 VGS = 10V, See Fig. 10 td(on) Turn-On Delay Time 8.1 12 VDD = 15V tr Rise Time 8.9 13 ID = 1.0A td(off) Turn-Off Delay Time 26 39 RG = 6.0Ω tf Fall Time 1726 RD = 15Ω Ciss Input Capacitance 650 VGS = 0V Coss Output Capacitance 320 pF VDS = 25V Crss Reverse Transfer Capacitance 130 = 1.0MHz, See Fig. 9 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns |
类似零件编号 - IRF7313 |
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类似说明 - IRF7313 |
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