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STD11N60M2-EP 数据表(PDF) 7 Page - STMicroelectronics |
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STD11N60M2-EP 数据表(HTML) 7 Page - STMicroelectronics |
7 / 16 page STD11N60M2-EP Electrical characteristics DocID027667 Rev 1 7/16 Figure 8: Capacitance variations Figure 9: Turn-off switching energy vs drain current Figure 10: Normalized gate threshold voltage vs temperature Figure 11: Normalized on-resistance vs temperature Figure 12: Normalized V(BR)DSS vs temperature Figure 13: Output capacitance stored energy 0.9 0.8 0.7 0.6 -75 -25 T J(°C) 1.0 25 75 125 I D = 250 µA 1.1 V GS(th) (norm) GIPG181120141615ALS 1.4 1.0 0.6 0.2 -75 T J(°C) -25 75 25 125 1.8 2.2 V GS = 10 V R DS(on) (norm) GIPG181120141628ALS GIPG191120141457ALS -75 T J(°C) -25 75 25 125 0.88 0.92 0.96 1.04 1.00 1.08 I D = 1mA V (BR)DSS (norm) |
类似零件编号 - STD11N60M2-EP |
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类似说明 - STD11N60M2-EP |
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