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DMP2004DMK_16 Datasheet(数据表) 2 Page - Diodes Incorporated

部件型号  DMP2004DMK
说明  DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
下载  6 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
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DMP2004DMK Datasheet(HTML) 2 Page - Diodes Incorporated

   
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DMP2004DMK
Document number: DS30939 Rev. 5 - 2
2 of 6
www.diodes.com
March 2016
© Diodes Incorporated
DMP2004DMK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±8
V
Drain Current (Note 5)
ID
-550
mA
Pulsed Drain Current
IDM
-1.9
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
500
mW
Thermal Resistance, Junction to Ambient (Note 5)
RJA
250
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
-20
V
VGS = 0V, ID = -250A
Zero Gate Voltage Drain Current
IDSS
-1.0
A
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
1.0
A
VGS = 4.5V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(TH)
-0.5
-1.0
V
VDS = VGS, ID = -250A
Static Drain-Source On-Resistance
RDS (ON)
0.7
1.1
1.7
0.9
1.4
2.0
VGS = -4.5V, ID = -430mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
Forward Transfer Admittance
|Yfs|
200
mS
VDS = -10V, ID = -0.2A
Diode Forward Voltage (Note 6)
VSD
-0.5
-1.2
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
175
pF
VDS = -16V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
30
pF
Reverse Transfer Capacitance
Crss
20
pF
Notes:
5.
Device mounted on FR-4 PCB.
6.
Short duration pulse test used to minimize self-heating effect.




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