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UMT1N 数据表(PDF) 1 Page - Rohm |
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UMT1N 数据表(HTML) 1 Page - Rohm |
1 / 4 page EMT1 / UMT1N / IMT1A Transistors Rev.A 1/3 General Purpose Transistor (Isolated Dual Transistors) EMT1 / UMT1N / IMT1A Features 1) Two 2SA1037AK chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. Structure Epitaxial planar type PNP silicon transistor Equivalent circuit EMT1 / UMT1N IMT1A Tr2 Tr1 (3) (2) (1) (4) (5) (6) Tr2 Tr1 (4) (5) (6) (3) (2) (1) The following characteristics apply to both Tr1 and Tr2. Absolute maximum ratings (Ta = 25 °C) Parameter Symbol VCBO VCEO VEBO IC Tj Tstg PC EMT1, UMT1N IMT1A Limits −60 −50 −6 −150 150 −55 to +150 150 (TOTAL) 300 (TOTAL) Unit V V V mA °C °C mW ∗ 1 ∗2 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperature Collector power dissipation ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. External dimensions (Unit : mm) ROHM : EMT6 EMT1 ROHM : UMT6 EIAJ : SC-88 UMT1N ROHM : SMT6 EIAJ : SC-74 IMT1A Abbreviated symbol : T1 Abbreviated symbol : T1 Abbreviated symbol : T1 1.2 1.6 (1) (2) (5) (3) (6) (4) Each lead has same dimensions 0.1Min. 2.1 1.25 Each lead has same dimensions 0.3to0.6 2.8 1.6 Each lead has same dimensions |
类似零件编号 - UMT1N |
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类似说明 - UMT1N |
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