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LM2733YMF 数据表(PDF) 11 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
部件名 LM2733YMF
功能描述  0.6/1.6 MHz Boost Converters With 40V Internal FET
Download  13 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LM2733YMF 数据表(HTML) 11 Page - National Semiconductor (TI)

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Application Hints (Continued)
MAXIMUM SWITCH CURRENT
The maximum FET swtch current available before the cur-
rent limiter cuts in is dependent on duty cycle of the appli-
cation. This is illustrated in the graphs below which show
both the typical and guaranteed values of switch current for
both the "X" and "Y" versions as a function of effective
(actual) duty cycle:
20055425
Switch Current Limit vs Duty Cycle - "X"
20055426
Switch Current Limit vs Duty Cycle - "Y"
CALCULATING LOAD CURRENT
As shown in the figure which depicts inductor current, the
load current is related to the average inductor current by the
relation:
I
LOAD =IIND(AVG) x (1 - DC)
Where "DC" is the duty cycle of the application. The switch
current can be found by:
I
SW =IIND(AVG) +
1
2 (I
RIPPLE)
Inductor ripple current is dependent on inductance, duty
cycle, input voltage and frequency:
I
RIPPLE =DCx(VIN-VSW)/(fxL)
combining all terms, we can develop an expression which
allows the maximum available load current to be calculated:
The equation shown to calculate maximum load current
takes into account the losses in the inductor or turn-OFF
switching losses of the FET and diode. For actual load
current in typical applications, we took bench data for vari-
ous input and output voltages for both the "X" and "Y"
versions of the LM2733 and displayed the maximum load
current available for a typical device in graph form:
20055434
Max. Load Current vs V
IN - "X"
20055433
Max. Load Current vs V
IN - "Y"
DESIGN PARAMETERS V
SW AND ISW
The value of the FET "ON" voltage (referred to as V
SW in the
equations) is dependent on load current. A good approxima-
tion can be obtained by multiplying the "ON Resistance" of
the FET times the average inductor current.
FET on resistance increases at V
IN values below 5V, since
the internal N-FET has less gate voltage in this input voltage
range (see Typical performance Characteristics curves).
Above V
IN = 5V, the FET gate voltage is internally clamped
to 5V.
www.national.com
11


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