MC74VHC04

http://onsemi.com

2

MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

DC Supply Voltage

–0.5 to + 7.0

V

DC Input Voltage

–0.5 to + 7.0

V

DC Output Voltage

V

Input Diode Current

−20

mA

Output Diode Current

± 20

mA

DC Output Current, per Pin

± 25

mA

± 50

mA

Power Dissipation in Still Air,

SOIC Package†

TSSOP Package†

500

450

mW

Storage Temperature

– 65 to + 150

_C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any

of these limits are exceeded, device functionality should not be assumed, damage may occur

and reliability may be affected.

†Derating — SOIC Package: – 7 mW/

_C from 65_ to 125_C

TSSOP Package: − 6.1 mW/

_C from 65_ to 125_C

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

DC Supply Voltage

2.0

5.5

V

DC Input Voltage

0

5.5

V

DC Output Voltage

0

V

Operating Temperature

−40

+ 85

_C

Input Rise and Fall Time

0

0

100

20

ns/V

DC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Conditions

V

Unit

Min

Typ

Max

Min

Max

Minimum High−Level

Input Voltage

2.0

3.0 to

5.5

1.50

1.50

V

Maximum Low−Level

Input Voltage

2.0

3.0 to

5.5

0.50

0.50

V

Minimum High−Level

Output Voltage

2.0

3.0

4.5

1.9

2.9

4.4

2.0

3.0

4.5

1.9

2.9

4.4

V

3.0

4.5

2.58

3.94

2.48

3.80

Maximum Low−Level

Output Voltage

2.0

3.0

4.5

0.0

0.0

0.0

0.1

0.1

0.1

0.1

0.1

0.1

V

3.0

4.5

0.36

0.36

0.44

0.44

Maximum Input

Leakage Current

0 to 5.5

± 0.1

± 0.1

μA

Maximum Quiescent

Supply Current

5.5

2.0

20.0

μA

This device contains protection

circuitry to guard against damage

due to high static voltages or electric

fields. However, precautions must

be taken to avoid applications of any

voltage higher than maximum rated

voltages to this high−impedance cir-

range GND

Unused inputs must always be

tied to an appropriate logic voltage

Unused outputs must be left open.