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SI4922BDY 数据表(PDF) 4 Page - Vishay Siliconix |
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SI4922BDY 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 74459 S09-0704-Rev. B, 27-Apr-09 Vishay Siliconix Si4922BDY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 °C 150 °C VSD - Source-to-Drain Voltage (V) 0.1 1 10 100 TJ - Temperature (°C) - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient VGS - Gate-to-Source Voltage (V) 0.00 0.02 0.04 0.06 0.08 0.10 01234567 8 910 ID = 5 A 125 °C 25 °C 0 20 40 60 80 100 0 1 1 1 0 0 . 0 0.01 Time (s) 0.1 Safe Operating Area, Junction-to-Ambient 100 1 0.1 1 10 100 0.01 10 0.1 10 µs TA = 25 °C Single Pulse 100 µs 1 ms DC 10 ms 100 ms Limited by RDS(on)* V DS - Drain-to-Source Voltage (V) * V DS > minimum VGS at which RDS(on) is specified |
类似零件编号 - SI4922BDY |
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类似说明 - SI4922BDY |
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