SI4922BDY datasheet(4/9 Pages) VISHAY

部件名	SI4922BDY

功能描述	Dual N-Channel 30-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 74459

S09-0704-Rev. B, 27-Apr-09

Vishay Siliconix

Si4922BDY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

25 °C

150 °C

VSD - Source-to-Drain Voltage (V)

0.1

1

10

100

TJ - Temperature (°C)

- 0.6

- 0.4

- 0.2

0.0

0.2

0.4

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

VGS - Gate-to-Source Voltage (V)

0.00

0.02

0.04

0.06

0.08

0.10

01234567

8

910

ID = 5 A

125 °C

25 °C

0

20

40

60

80

100

0

1

0

.

0

0.01

Time (s)

0.1

Safe Operating Area, Junction-to-Ambient

100

1

0.1

1

10

100

0.01

10

0.1

10 µs

TA = 25 °C

Single Pulse

100 µs

1 ms

DC

10 ms

100 ms

Limited by RDS(on)*

V

DS - Drain-to-Source Voltage (V)

* V

DS > minimum VGS at which RDS(on) is specified

类似零件编号 - SI4922BDY

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI4922BDY	185Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET 01-Jan-2022
Vishay Siliconix	SI4922BDY-T1-E3	254Kb / 10P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 27-Apr-09
VBsemi Electronics Co.,...	SI4922BDY-T1-E3	1Mb / 9P	Dual N-Channel 30 V (D-S) MOSFET
Vishay Siliconix	SI4922BDY	185Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET 01-Jan-2022

More results

类似说明 - SI4922BDY

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI7212DN	94Kb / 6P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Jun-05
DinTek Semiconductor Co...	DTM4936	294Kb / 9P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4932DY	111Kb / 7P	Dual N-Channel 30-V (D-S) MOSFET Rev. A, 22-Dec-08
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	SI7212DN	549Kb / 12P	Dual N-Channel 30-V (D-S) MOSFET Rev. F, 14-Sep-09
Analog Power	AM4934N	95Kb / 3P	Dual N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4936ADY	61Kb / 4P	Dual N-Channel 30-V (D-S) MOSFET Rev. B, 13-Oct-03