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ST580S 数据表(PDF) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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ST580S 数据表(HTML) 3 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
3 / 5 page Technical Data Green Products Data Sheet N1587, Rev. B China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com ST580S Electrical Characteristics: Characteristics Symbol Condition Typ. Max. Units Forward Voltage Drop* VF1 @ 2.5A, Pulse, TJ = 25 C @ 5A, Pulse, TJ = 25 C 0.48 0.59 - 0.72 V VF2 @ 2.5A, Pulse, TJ = 125 C @ 5A, Pulse, TJ = 125 C 0.45 0.59 - 0.66 V Reverse Current* IR1 @VR = rated VR TJ = 25 C 0.011 0.4 mA Reverse Current* IR2 @VR = rated VR TJ = 125 C 4 15 mA Junction Capacitance CT @VR = 5V, TC = 25 C fSIG = 1MHz 245 - pF * Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Symbol Condition Specification Units Junction Temperature TJ - -55 to +150 C Storage Temperature Tstg - -55 to +150 C Typical Thermal Resistance Junction to Ambient (NOTE1) RJA DC operation 75 C/W Typical Thermal Resistance Junction to Lead (NOTE1) RJL DC operation 4 C/W Approximate Weight wt - 0.08 g Case Style TO-277B NOTE: 1. UnitsmountedonP.C.B.,0.5x0.5”(30x30mm)copperpads. |
类似零件编号 - ST580S |
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类似说明 - ST580S |
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