1N2927 datasheet(1/1 Pages) ASI

部件名	1N2927

功能描述	GERMANIUM TUNNEL DIODE

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制造商	ASI [Advanced Semiconductor]

网页	http://www.advancedsemiconductor.com

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A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

CHARACTERISTICS TC = 25 OC

NONE

SYMBOL

TEST CONDITIONS

MINIMUM

TYPICAL

MAXIMUM

UNITS

IP

90

110

µµµµA

IV

35

µµµµA

VP

75

mV

VV

475

mV

VF

IF = 110

µA

600

1000

mV

IR

1.0

mA

GERMANIUM TUNNEL DIODE

1N2927

DESCRIPTION:

The

1N2927 is Designed for

Switching Applications in Industrial and

Miitary Applications.

MAXIMUM RATINGS

IF

500

µA

TJ

-65

OC to +150 OC

TSTG

-65

OC to +200 OC

TSOLD

10 S/250

OC

PACKAGE STYLE TO-18

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