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LM2467TA 数据表(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 LM2467TA
功能描述  Monolithic Triple 7.5 ns CRT Driver
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

LM2467TA 数据表(HTML) 5 Page - National Semiconductor (TI)

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Theory of Operation
The LM2467 is a high voltage monolithic three channel CRT
driver suitable for high resolution display applications. The
LM2467 operates with 80V and 12V power supplies. The
part is housed in the industry standard 9-lead TO-220
molded plastic power package.
The circuit diagram of the LM2467 is shown in
Figure 1. The
PNP emitter follower, Q5, provides input buffering. Q1 and
Q2 form a fixed gain cascode amplifier with resistors R1 and
R2 setting the gain at −20. Emitter followers Q3 and Q4
isolate the high output impedance of the cascode stage from
the capacitance of the CRT cathode which decreases the
sensitivity of the device to load capacitance. Q6 provides
biasing to the output emitter follower stage to reduce cross-
over distortion at low signal levels.
Figure 2 shows a typical test circuit for evaluation of the
LM2467. This circuit is designed to allow testing of the
LM2467 in a 50
Ω environment without the use of an expen-
sive FET probe. In this test circuit, the two 4.95k
Ω resistors
form a 200:1 wideband, low capacitance probe when con-
nected to a 50
Ω coaxial cable and a 50Ω load (such as a
50
Ω oscilloscope input). The input signal from the generator
is ac coupled to the base of Q5.
Application Hints
INTRODUCTION
National Semiconductor (NSC) is committed to provide ap-
plication information that assists our customers in obtaining
the best performance possible from our products. The fol-
lowing information is provided in order to support this com-
mitment. The reader should be aware that the optimization of
performance was done using a specific printed circuit board
designed at NSC. Variations in performance can be realized
due to physical changes in the printed circuit board and the
application. Therefore, the designer should know that com-
ponent value changes may be required in order to optimize
performance in a given application. The values shown in this
document can be used as a starting point for evaluation
purposes. When working with high bandwidth circuits, good
layout practices are also critical to achieving maximum per-
formance.
IMPORTANT INFORMATION
The LM2467 performance is targeted for the VGA (640 x
480) to XGA (1024 x 768, 85 Hz refresh) resolution market.
The application circuits shown in this document to optimize
performance and to protect against damage from CRT ar-
cover are designed specifically for the LM2467. If another
member of the LM246X family is used, please refer to its
datasheet.
POWER SUPPLY BYPASS
Since the LM2467 is a wide bandwidth amplifier, proper
power supply bypassing is critical for optimum performance.
Improper power supply bypassing can result in large over-
shoot, ringing or oscillation. 0.1 µF capacitors should be
connected from the supply pins, V
CC and VBB, to ground, as
close to the LM2467 as is practical. Additionally, a 47 µF or
larger electrolytic capacitor should be connected from both
supply pins to ground reasonably close to the LM2467.
ARC PROTECTION
During normal CRT operation, internal arcing may occasion-
ally occur. Spark gaps, in the range of 200V, connected from
the CRT cathodes to CRT ground will limit the maximum
voltage, but to a value that is much higher than allowable on
the LM2467. This fast, high voltage, high energy pulse can
damage the LM2467 output stage. The application circuit
shown in
Figure 9 is designed to help clamp the voltage at
the output of the LM2467 to a safe level. The clamp diodes,
D1 and D2, should have a fast transient response, high peak
current rating, low series impedance and low shunt capaci-
tance. FDH400 or equivalent diodes are recommended. Do
not use 1N4148 diodes for the clamp diodes. D1 and D2
should have short, low impedance connections to V
CC and
ground respectively. The cathode of D1 should be located
very close to a separately decoupled bypass capacitor (C3 in
Figure 9). The ground connection of D2 and the decoupling
capacitor should be very close to the LM2467 ground. This
will significantly reduce the high frequency voltage transients
that the LM2467 would be subjected to during an arcover
condition. Resistor R2 limits the arcover current that is seen
by the diodes while R1 limits the current into the LM2467 as
well as the voltage stress at the outputs of the device. R2
should be a 12W solid carbon type resistor. R1 can be a 14W
metal or carbon film type resistor. Having large value resis-
tors for R1 and R2 would be desirable, but this has the effect
of increasing rise and fall times. Inductor L1 is critical to
reduce the initial high frequency voltage levels that the
LM2467 would be subjected to. The inductor will not only
help protect the device but it will also help minimize rise and
fall times as well as minimize EMI. For proper arc protection,
it is important to not omit any of the arc protection compo-
nents shown in
Figure 9.
www.national.com
5


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