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NBXSBA019LNHTAG 数据表(PDF) 3 Page - ON Semiconductor |
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NBXSBA019LNHTAG 数据表(HTML) 3 Page - ON Semiconductor |
3 / 6 page NBXDBA019, NBXHBA019, NBXSBA019 http://onsemi.com 3 Table 6. DC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 2) Symbol Characteristic Conditions Min. Typ. Max. Units IDD Power Supply Current 78 100 mA VIH OE and FSEL Input HIGH Voltage 2000 VDD mV VIL OE and FSEL Input LOW Voltage GND − 300 800 mV IIH Input HIGH Current OE FSEL −100 −100 +100 +100 mA IIL Input LOW Current OE FSEL −100 −100 +100 +100 mA VOH Output HIGH Voltage VDD = 3.3 V VDD−1195 2105 VDD−945 2355 mV VOL Output LOW Voltage VDD = 3.3 V VDD−1945 1355 VDD−1600 1700 mV VOUTPP Output Voltage Amplitude 660 mV NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 2. Measurement taken with outputs terminated with 50 ohm to VDD−2 V. See Figure 5. Table 7. AC CHARACTERISTICS (VDD = 3.3 V ± 10%, GND = 0 V, TA = −40°C to +85°C) (Note 3) Symbol Characteristic Conditions Min. Typ. Max. Units fCLKOUT Output Clock Frequency FSEL = HIGH 125 MHz FSEL = LOW 250 Df Frequency Stability − NBXDBA019/NBXSBA019/NBXHBA019 (Note 4) ±50 ppm FNOISE Phase−Noise Performance 100 Hz of Carrier −112/−105 dBc/Hz fCLKout = 125 MHz/250 MHz (See Figures 3 and 4) 1 kHz of Carrier −123/−116 dBc/Hz 10 kHz of Carrier −131/−124 dBc/Hz 100 kHz of Carrier −131/−124 dBc/Hz 1 MHz of Carrier −139/−133 dBc/Hz 10 MHz of Carrier −161/−158 dBc/Hz tjit(F) RMS Phase Jitter 12 kHz to 20 MHz 0.4 0.9 ps tjitter Cycle to Cycle, RMS 1000 Cycles 1 8 ps Cycle to Cycle, Peak−to−Peak 1000 Cycles 7 30 ps Period, RMS 10,000 Cycles 0.6 4 ps Period, Peak−to−Peak 10,000 Cycles 5 20 ps tOE/OD Output Enable/Disable Time 200 ns tDUTY_CYCLE Output Clock Duty Cycle (Measured at Cross Point) 48 50 52 % tR Output Rise Time (20% and 80%) 250 400 ps tF Output Fall Time (80% and 20%) 250 400 ps tstart Start−up Time 1 5 ms Aging 1st Year 3 ppm Every Year After 1st 1 ppm NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit values are applied individually under normal operating conditions and not valid simultaneously. 3. Measurement taken with outputs terminated with 50 ohm to VDD−2 V. See Figure 5. 4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging. |
类似零件编号 - NBXSBA019LNHTAG |
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类似说明 - NBXSBA019LNHTAG |
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