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TC2320 数据表(PDF) 3 Page - Supertex, Inc |
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TC2320 数据表(HTML) 3 Page - Supertex, Inc |
3 / 4 page 3 TC2320 ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com P-Channel Electrical Characteristics (T A = 25°C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BV DSS Drain-to-source breakdown voltage -200 - - V V GS = 0V, ID = -2.0mA V GS(th) Gate threshold voltage -1.0 - -2.4 V V GS = VDS, ID = -1.0mA ΔV GS(th) Change in V GS(th) with temperature - - 4.5 mV/OC V GS = VDS, ID = -1.0mA I GSS Gate body leakage - - -100 nA V GS = ±20V, VDS = 0V I DSS Zero gate voltage drain current - - -10 µA V GS = 0V, VDS = Max rating - - -1.0 mA V GS = 0V, TA = 125 O C, V DS = 0.8 Max Rating I D(ON) On-state drain current -0.25 -0.7 - A V GS = -4.5V, VDS = -25V -0.75 -2.1 - V GS = -10V, VDS = -25V R DS(ON) Static drain-to-source on-state resistance - 10 15 Ω V GS = -4.5V, ID = -100mA - 8.0 12 V GS = -10V, ID = -200mA ΔR DS(ON) Change in R DS(ON) with temperature - - 1.7 %/OC V GS = -10V, ID =-200mA G FS Forward transconductance 100 250 - mmho V DS = -25V, ID = -200mA C ISS Input capacitance - 75 125 pF V GS = 0V, V DS = -25V, f = 1.0MHz C OSS Common source output capacitance - 20 85 C RSS Reverse transfer capacitance - 10 35 t d(ON) Turn-on delay time - - 10 ns V DD = -25V, I D = -0.75A, R GEN = 25Ω t r Rise time - - 15 t d(OFF) Turn-on delay time - - 20 t f Fall time - - 15 V SD Diode forward voltage drop - - -1.8 V V GS = 0V, ISD = -0.5A t rr Reverse recovery time - 300 - ns V GS = 0V, ISD = -0.5A Notes: All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested. 1. 2. P-Channel Switching Waveforms and Test Circuit 90% 10% 90% 90% 10% 10% PULSE GENERATOR VDD RL Output D.U.T. t(ON) td(ON) t(OFF) td(OFF) tF tr INPUT INPUT OUTPUT 0V VDD RGEN 0V -10V |
类似零件编号 - TC2320 |
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类似说明 - TC2320 |
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