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DMP1045U Datasheet(数据表) 2 Page - ZP Semiconductor

部件型号  DMP1045U
说明  P-CHANNEL ENHANCEMENT MODE MOSFET
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制造商  ZPSEMI [ZP Semiconductor]
网页  http://zpsemi.com/
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DMP1045U Datasheet(HTML) 2 Page - ZP Semiconductor

   
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-12
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current (Note 4) VGS = -4.5V
Steady
State
TA = 25°C
TA = 70°C
ID
4.0
3.1
A
Continuous Drain Current (Note 4) VGS = -2.5V
Steady
State
TA = 25°C
TA = 70°C
ID
3.3
2.6
A
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
TA = 25°C
TA = 70°C
ID
5.2
4.2
A
Continuous Drain Current (Note 5) VGS = -2.5V
Steady
State
TA = 25°C
TA = 70°C
ID
4.3
3.4
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
2
A
Pulsed Drain Current (10us pulse, duty cycle=1%) (Note 4)
IDM
40
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
PD
0.8
W
Thermal Resistance, Junction to Ambient (Note 4)
RθJA
168
°C/W
Total Power Dissipation (Note 5)
PD
1.3
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
99
°C/W
Thermal Resistance, Junction to Case (Note 5)
RθJc
14.8
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
-12
-
-
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
TJ = 25 C
IDSS
-
-
-1.0
μA
VDS = -12V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±10
μA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
-0.3
-0.55
-1.0
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
-
26
31
m
VGS = -4.5V, ID = -4.0A
31
45
VGS = -2.5V, ID = -3.5A
45
75
VGS = -1.8V, ID = -2.7A
Forward Transfer Admittance
|Yfs|
-
12
-
S
VDS = -5V, ID = -4A
Diode Forward Voltage
VSD
-
-0.6
-
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
-
1357
-
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
-
504
-
pF
Reverse Transfer Capacitance
Crss
-
235
-
pF
Gate Resistnace
Rg
-
14.1
-
VDS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 7)
Total Gate Charge
Qg
-
15.8
-
nC
VGS = -4.5V, VDS = -10V, ID = -4A
Gate-Source Charge
Qgs
-
2.0
-
nC
Gate-Drain Charge
Qgd
-
3.9
-
nC
Turn-On Delay Time
tD(on)
-
15.7
-
ns
VDS = -10V, VGS = -4.5V,
RL = 2.5Ω, RG = 3.0Ω
Turn-On Rise Time
tr
-
23.3
-
ns
Turn-Off Delay Time
tD(off)
-
91.2
-
ns
Turn-Off Fall Time
tf
-
106.9
-
ns
Notes:
2. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
3. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
DMP1045U
P-CHANNEL ENHANCEMENT MODE MOSFET
2 of 2
sales@zpsemi.com
www.zpsemi.com




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