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LM299 数据表(PDF) 4 Page - National Semiconductor (TI) |
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LM299 数据表(HTML) 4 Page - National Semiconductor (TI) |
4 / 12 page Electrical Characteristics (Note 3) (Continued) Parameter Conditions LM3999Z Units Min Typ Max Initial Turn-On Current 9 ≤ V S ≤ 40, TA = 25˚C 140 200 mA Electrical Characteristics (Notes 3, 6) Parameter Conditions LM199AH, LM299AH LM399AH Units Min Typ Max Min Typ Max Reverse Breakdown Voltage 0.5 mA ≤ I R ≤ 10 mA 6.8 6.95 7.1 6.6 6.95 7.3 V Reverse Breakdown Voltage 0.5 mA ≤ I R ≤ 10 mA 6 9 6 12 mV Change with Current Reverse Dynamic Impedance I R = 1 mA 0.5 1 0.5 1.5 Ω Reverse Breakdown −55˚C ≤T A≤+85˚C LM199A 0.00002 0.00005 %/˚C Temperature Coefficient +85˚C ≤T A≤+125˚C 0.0005 0.0010 %/˚C −25˚C ≤T A≤85˚C LM299A 0.00002 0.00005 %/˚C 0˚C ≤T A≤+70˚C LM399A 0.00003 0.0001 %/˚C RMS Noise 10 Hz ≤ f ≤ 10 kHz 7 20 7 50 µV Long Term Stability Stabilized, 22˚C ≤T A≤28˚C, 20 20 ppm 1000 Hours, I R=1mA±0.1% Temperature Stabilizer T A=25˚C, Still Air, VS=30V 8.5 14 8.5 15 mA Supply Current T A =− 55˚C 22 28 Temperature Stabilizer 9 40 9 40 V Supply Voltage Warm-Up Time to 0.05% V S = 30V, TA = 25˚C 3 3 sec. Initial Turn-on Current 9 ≤V S≤40, TA=+25˚C, (Note 4) 140 200 140 200 mA Note 2: The substrate is electrically connected to the negative terminal of the temperature stabilizer. The voltage that can be applied to either terminal of the refer- ence is 40V more positive or 0.1V more negative than the substrate. Note 3: These specifications apply for 30V applied to the temperature stabilizer and −55˚C ≤TA≤+125˚C for the LM199; −25˚C≤TA≤+85˚C for the LM299 and 0˚C ≤TA≤+70˚C for the LM399 and LM3999. Note 4: This initial current can be reduced by adding an appropriate resistor and capacitor to the heater circuit. See the performance characteristic graphs to de- termine values. Note 5: Do not wash the LM199 with its polysulfone thermal shield in TCE. Note 6: A military RETS electrical test specification is available for the LM199H/883, LM199AH/883, and LM199AH-20/883 on request. Ordering Information Initial 0˚C to +70˚C −25˚C to +85˚C −55˚C to +125˚C NS Tolerance Package 2% LM299AH LM199AH, LM199AH/883 H04D 5% LM399H LM299H H04D LM399AH 5% LM3999Z Z03A Certified Long Term Drift The National Semiconductor LM199AH-20, LM299AH-20, and LM399AH-50 are ultra-stable Zener references specially selected from the production runs of LM199AH, LM299AH, LM399AH and tested to confirm a long-term stability of 20, 20, or 50 ppm per 1000 hours, respectively. The devices are measured every 168 hours and the voltage of each device is logged and compared in such a way as to show the deviation from its initial value. Each measurement is taken with a probable-worst-case deviation of ±2 ppm, compared to the Reference Voltage, which is derived from several groups of NBS-traceable references such as LM199AH-20’s, 1N827’s, and saturated standard cells, so that the deviation of any one group will not cause false indications. Indeed, this compari- son process has recently been automated using a specially prepared computer program which is custom-designed to re- ject noisy data (and require a repeat reading) and to record the average of the best 5 of 7 readings, just as a sagacious standards engineer will reject unbelievable readings. The typical characteristic for the LM199AH-20 is shown be- low. This computerized print-out form of each reference’s stability is shipped with the unit. www.national.com 4 |
类似零件编号 - LM299 |
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类似说明 - LM299 |
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