数据搜索系统,热门电子元器件搜索 |
|
MTB100A10KRH8-0-T6-G 数据表(PDF) 6 Page - Cystech Electonics Corp. |
|
MTB100A10KRH8-0-T6-G 数据表(HTML) 6 Page - Cystech Electonics Corp. |
6 / 10 page CYStech Electronics Corp. Spec. No. : C059H8 Issued Date : 2016.11.01 Revised Date : 2016.11.02 Page No. : 6/ 10 MTB100A10KRH8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 1 10 100 1000 0 5 10 15 20 25 30 35 40 45 50 VDS, Drain-Source Voltage(V) Coss Ciss Crss NormalizedThreshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 ID, Drain Current(A) VDS=10V Pulsed Ta=25°C Gate Charge Characteristics 0 2 4 6 8 10 02 4 6 Total Gate Charge---Qg(nC) 8 ID=2A VDS=80V VDS=20V VDS=50V Maximum Safe Operating Area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100 μs RDS(ON) Limited TA=25°C, Tj=150°, VGS=10V RθJA=70°C/W, Single Pulse 1s Maximum Drain Current vs Junction Temperature 0 0.5 1 1.5 2 2.5 3 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=10V, RθJA=70°C/W |
类似零件编号 - MTB100A10KRH8-0-T6-G |
|
类似说明 - MTB100A10KRH8-0-T6-G |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |