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SI9150CY-T1-E3 数据表(PDF) 3 Page - Vishay Siliconix |
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SI9150CY-T1-E3 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si9150 Vishay Siliconix Document Number: 70020 S-40752—Rev. F, 19-Apr-04 www.vishay.com 3 SPECIFICATIONSa Limits D Suffix −40 to 85_C Limits C Suffix 0 to 70_C Test Conditions Unless Otherwise Specified 6.0 v VDD v 16.5 V Parameter Unit Maxb Typc Minb Maxb Typc Minb Test Conditions Unless Otherwise Specified 6.0 v VDD v 16.5 V Symbol Output Output High Voltage VOH IOUT = 10 mA, VDD = 10 V 9.75 9.7 V Output Low Voltage VOL IOUT = −10 mA, VDD = 10 V 0.25 0.3 V Output Resistance ROUT IOUT = 100 mA, VDD = 10 V 10 20 10 25 W Rise Timed tr CL = 800 pF VDD = 10 V 30 60 30 70 ns Fall Timed tf CL = 800 pF, VDD = 10 V 30 60 30 70 ns Logic Delay to Output td(EN) Transition High to Low 0.25 1 0.25 1 ms Enable Pull-Up Resistance REN 500 500 kW STBY Pull-Up Current ISTBY TA = 25_C, VSTBY = 0 V VDD = 10 V −25 −20 −15 −28 −20 −12 mA Turn-On Threshold VENH VDD = 10 V, Rising Input Voltage 6 6.8 8 6 6.8 8 V Turn-Off Threshold VENL VDD = 10 V, Falling Input Voltage 2 3.75 5 2 3.75 5 V Notes a. Refer to PROCESS OPTION FLOWCHART for additional information. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. The voltage reference is trimmed with the feedback (Pin 5) connected to compensation (Pin 4) so that the effect of the error amplifier’s input offset voltage is eliminated. f. COSC includes the PC board’s parasitic capacitance. TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Oscillator Characteristics 10 100 1000 1000 100 10 50 pF 100 pF 150 pF 200 pF rOSC − Oscillator Resistance (kW) |
类似零件编号 - SI9150CY-T1-E3 |
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类似说明 - SI9150CY-T1-E3 |
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