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SI9100DN02 数据表(PDF) 3 Page - Vishay Siliconix |
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SI9100DN02 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Si9100 Vishay Siliconix Document Number: 70000 S-42041—Rev. G, 15-Nov-04 www.vishay.com 3 SPECIFICATIONSa Parameter Unit Limits Tempb Test Conditions UnlessOtherwise Specified DISCHARGE = −VIN = 0 V VCC = 10 V, +VIN = 48 V RBIAS = 390 kW, ROSC = 330 kW Symbol Parameter Unit Maxc Typd Minc Tempb Test Conditions UnlessOtherwise Specified DISCHARGE = −VIN = 0 V VCC = 10 V, +VIN = 48 V RBIAS = 390 kW, ROSC = 330 kW Symbol Current Limit Threshold Voltage VSOURCE RL = 100 W from DRAIN to VCC VFB = 0 V Room 1.0 1.2 1.4 V Delay to Outpute td RL = 100 W from DRAIN to VCC VSOURCE = 1.5 V, See Figure 1 Room 100 200 ns Pre-Regulator/Start-Up Input Voltage +VIN IIN = 10 mA Room 70 V Input Leakage Current +IIN VCC w 10 V Room 10 mA Pre-Regulator Start-Up Current ISTART Pulse Widthv300 ms VCC = VUVLO Room 8 15 mA VCC Pre-Regulator Turn-Off Threshold Voltage VREG IPRE-REGULATOR = 10 mA Room 7.8 9.4 9.7 Undervoltage Lockout VUVLO RL = 100 W from DRAIN to VCC See Detailed Description Room 7.0 8.8 9.2 V VREG −VUVLO VDELTA Room 0.3 0.6 Supply Supply Current ICC Room 0.45 0.6 1.0 mA Bias Current IBIAS Room 10 15 20 mA Logic SHUTDOWN Delaye tSD VSOURCE = −VIN, See Figure 2 Room 50 100 SHUTDOWN Pulse Widthe tSW Room 50 RESET Pulse Widthe tRW See Figure 3 Room 50 ns Latching Pulse Widthe SHUTDOWN and RESET Low tLW See Figure 3 Room 25 Input Low Voltage VIL Room 2.0 V Input High Voltage VIH Room 8.0 V Input Current, Input Voltage High IIH VIN = 10 V Room 1 5 mA Input Current, Input Voltage Low IIL VIN = 0 V Room −35 −25 mA MOSFET Switch Breakdown Voltage V(BR)DSS VSOURCE = SHUTDOWN = 0 V IDRAIN = 100 mA Full 150 180 V Drain-Source On Resistanceg rDS(on) VSOURCE = 0 V, IDRAIN = 100 mA Room 3 5 W Drain Off Leakage Current IDSS VSOURCE = SHUTDOWN = 0 V VDRAIN = 100 V Room 10 mA Drain Capacitance CDS VSOURCE = SHUTDOWN = 0 V Room 35 pF Notes a. Refer to PROCESS OPTION FLOWCHART for additional information. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. e. Guaranteed by design, not subject to production test. f. CSTRAY Pin 8 = v 5 pF g. Temperature coefficient of rDS(on) is 0.75% per _C, typical. |
类似零件编号 - SI9100DN02 |
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类似说明 - SI9100DN02 |
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