SI4947ADY-T1 datasheet(1/4 Pages) VISHAY

部件名	SI4947ADY-T1

功能描述	Dual P-Channel 30-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Si4947ADY

Vishay Siliconix

Document Number: 71101

S-31989—Rev. C, 13-Oct-03

www.vishay.com

1

Dual P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

-30

0.080 @ VGS = -10 V

-3.9

-30

0.135 @ VGS = -4.5 V

-3.0

S1

G1

D1

P-Channel MOSFET

S2

G2

D2

P-Channel MOSFET

S1

D1

G1

D1

S2

D2

G2

D2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4947ADY

Si4947ADY-T1 (with Tape and Reel)

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

"20

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

-3.9

-3.0

Continuous Drain Current (TJ = 150_C)a

TA = 70_C

ID

-3.1

-2.4

A

Pulsed Drain Current

IDM

-20

A

continuous Source Current (Diode Conduction)a

IS

-1.7

-1.0

Maximum Power Dissipationa

TA = 25_C

PD

2.0

1.2

W

Maximum Power Dissipationa

TA = 70_C

PD

1.3

0.76

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 10 sec

R

54

62.5

Maximum Junction-to-Ambienta

Steady State

RthJA

87

105

_C/W

Maximum Junction-to-Foot

Steady State

RthJF

34

45

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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