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IRHG7214 Datasheet(数据表) 3 Page - International Rectifier

部件型号  IRHG7214
说明  RADIATION HARDENED POWER MOSFET THRU-HOLE
下载  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
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IRHG7214 Datasheet(HTML) 3 Page - International Rectifier

   
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3
Pre-Irradiation
Pre-Irradiation
Pre-Irradiation
Pre-Irradiation
Pre-Irradiation
IRHG7214
IRHG7214
IRHG7214
IRHG7214
IRHG7214
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
Parameter
Parameter
Parameter
Parameter
100KRads(Si)
300 - 1000K Rads (Si)
U
UU
UUnits
nits
nits
nits
nits
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Test Conditions
Min
Min
Min
Min
Min
Max
Max
Max
Max
Max
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
250
—
250
—
V
VGS = 0V, ID = 1.0mA
V/5JD
Gate Threshold Voltage
2.0
4.0
1.25
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
—
100
—
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
—
-100
—
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
—
25
—
50
µA
VDS=200V, VGS =0V
RDS(on)
Static Drain-to-Source" ➃
—
2.25
—
3.0
VGS = 12V, ID =0.3A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source" ➃
—
2.25
—
3.0
VGS = 12V, ID =0.3A
On-State Resistance (MO-036AB)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Radiation Characteristics
Radiation Characteristics
Radiation Characteristics
Radiation Characteristics
Fig a.
Fig a.
Fig a.
Fig a.
Fig a. Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage" ➃
—
1.70
—
1.70
V
VGS = 0V, IS = 0.5A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
Table 2. Single Event Effect Safe Operating Area
Table 2. Single Event Effect Safe Operating Area
Table 2. Single Event Effect Safe Operating Area
Table 2. Single Event Effect Safe Operating Area
Ion
Ion
Ion
Ion
Ion
LET
LET
LET
LET
LET
Energy
Range
Energy
Range
Energy
Range
Energy
Range
Energy
Range
V
VV
V
VDS(V)
DS(V)
DS(V)
DS(V)
DS(V)
MeV/(mg/cm ))
(MeV)
(µm)
@
@
@
@
@
V
VV
VVGS
GS
GS
GS
GS
=0V @
=0V @
=0V @
=0V @
=0V @
V
VV
V
VGS
GS
GS
GS
GS
=-5V@
=-5V@
=-5V@
=-5V@
=-5V@
V
VV
V
VGS
GS
GS
GS
GS
=-10V@
=-10V@
=-10V@
=-10V@
=-10V@
V
VV
VVGS
GS
GS
GS
GS
=-15V @
=-15V @
=-15V @
=-15V @
=-15V @
V
VV
VVGS
GS
GS
GS
GS
=-20V
=-20V
=-20V
=-20V
=-20V
Cu
28.0
285
43
250
250
250
250
250
Br
36.8
305
39
250
250
250
225
210
1. Part numbers IRHG7214
2. Part number IRHG3214, IRHG4214 and IRHG8214
0
50
100
150
200
250
300
0
-5
-10
-15
-20
VGS
Cu
Br




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