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BF1211R 数据表(PDF) 3 Page - NXP Semiconductors |
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BF1211R 数据表(HTML) 3 Page - NXP Semiconductors |
3 / 15 page 2003 Dec 16 3 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1211; BF1211R; BF1211WR ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Ts is the temperature of the soldering point of the source lead. THERMAL CHARACTERISTICS CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BF1211 − plastic surface mounted package; 4 leads SOT143B BF1211R − plastic surface mounted package; reverse pinning; 4 leads SOT143R BF1211WR − plastic surface mounted package; reverse pinning; 4 leads SOT343R SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 6V ID drain current (DC) − 30 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation BF1211; BF1211R Ts ≤ 116 °C; note 1 − 180 mW BF1211WR Ts ≤ 122 °C; note 1 − 180 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C SYMBOL PARAMETER VALUE UNIT Rth(j-s) thermal resistance from junction to soldering point BF1211; BF1211R 185 K/W BF1211WR 155 K/W |
类似零件编号 - BF1211R |
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类似说明 - BF1211R |
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