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BC846BDW1T1 数据表(PDF) 5 Page - ON Semiconductor |
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BC846BDW1T1 数据表(HTML) 5 Page - ON Semiconductor |
5 / 6 page BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 http://onsemi.com 5 Figure 13. Thermal Response t, TIME (ms) 1.0 1.0 0 0.1 0.01 0.001 10 100 1.0k 10k 100k Figure 14. Active Region Safe Operating Area VCE, COLLECTOR−EMITTER VOLTAGE (V) −200 −1.0 TA = 25°C D = 0.5 0.2 0.1 0.05 SINGLE PULSE BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 3 ms TJ = 25°C ZqJA(t) = r(t) RqJA RqJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) t1 t2 P(pk) DUTY CYCLE, D = t1/t2 −100 −50 −10 −5.0 −2.0 −5.0 −10 −30 −45 −65 −100 1 s BC558 BC557 BC556 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150 °C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 1.0M 0.02 0.01 |
类似零件编号 - BC846BDW1T1 |
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类似说明 - BC846BDW1T1 |
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