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BC846BDW1T1 Datasheet(数据表) 5 Page - ON Semiconductor

部件型号  BC846BDW1T1
说明  Dual General Purpose Transistors
下载  6 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
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BC846BDW1T1 Datasheet(HTML) 5 Page - ON Semiconductor

   
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BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
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5
Figure 13. Thermal Response
t, TIME (ms)
1.0
1.0
0
0.1
0.01
0.001
10
100
1.0k
10k
100k
Figure 14. Active Region Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
−200
−1.0
TA = 25°C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
ZqJA(t) = r(t) RqJA
RqJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
−100
−50
−10
−5.0
−2.0
−5.0
−10
−30 −45 −65 −100
1 s
BC558
BC557
BC556
The safe operating area curves indicate IC−VCE limits
of the transistor that must be observed for reliable
operation. Collector load lines for specific circuits must
fall below the limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC
or TA is variable depending upon conditions. Pulse
curves are valid for duty cycles to 10% provided TJ(pk)
150
°C. TJ(pk) may be calculated from the data in
Figure 13. At high case or ambient temperatures,
thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by the
secondary breakdown.
1.0M
0.02
0.01




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