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BC846BDW1T1 Datasheet(数据表) 4 Page - ON Semiconductor

部件型号  BC846BDW1T1
说明  Dual General Purpose Transistors
下载  6 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
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BC846BDW1T1 Datasheet(HTML) 4 Page - ON Semiconductor

   
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BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
http://onsemi.com
4
TYPICAL CHARACTERISTICS − BC846
Figure 7. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1
1.0
10
100
0.2
0.2
0.5
0.2
1.0
10
200
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
−1.0
1.2
1.6
2.0
0.02
1.0
10
0
20
0.1
0.4
0.8
0.2
2.0
10
200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
VCE = 5 V
TA = 25°C
0
0.5
2.0
5.0
20
50
100
0.05
0.2
0.5
2.0
5.0
100 mA
20 mA
−1.4
−1.8
−2.2
−2.6
−3.0
0.5
5.0
20
50
100
−55°C to 125°C
qVB for VBE
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1
0.2
1.0
50
2.0
2.0
10
100
100
200
500
50
20
20
10
6.0
4.0
1.0
10
50 100
5.0
VCE = 5 V
TA = 25°C
0.5
5.0
20
TA = 25°C
Cob
Cib




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