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BC846BDW1T1 Datasheet(数据表) 2 Page - ON Semiconductor

部件型号  BC846BDW1T1
说明  Dual General Purpose Transistors
下载  6 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
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BC846BDW1T1 Datasheet(HTML) 2 Page - ON Semiconductor

   
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BC846BDW1T1, BC847BDW1T1, BC848CDW1T1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CEO
65
45
30
V
Collector − Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846
BC847
BC848
V(BR)CES
80
50
30
V
Collector − Base Breakdown Voltage
(IC = 10 mA)
BC846
BC847
BC848
V(BR)CBO
80
50
30
V
Emitter − Base Breakdown Voltage
(IE = 1.0 mA)
BC846
BC847
BC848
V(BR)EBO
6.0
6.0
5.0
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO
15
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846B, BC847B
BC848C
(IC = 2.0 mA, VCE = 5.0 V)
BC846B, BC847B
BC848C
hFE
200
420
150
270
290
520
450
800
Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat)
0.25
0.6
V
Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat)
0.7
0.9
V
Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on)
580
660
700
770
mV
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
4.5
pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
NF
10
dB




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