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ADG812YRU-REEL 数据表(PDF) 4 Page - Analog Devices |
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ADG812YRU-REEL 数据表(HTML) 4 Page - Analog Devices |
4 / 16 page ADG811/ADG812/ADG813 Rev. A | Page 4 of 16 Table 2. VDD = 2.5 V ± 0.2 V, GND = 0 V, unless otherwise noted1 Parameter +25°C –40°C to +85°C –40°C to +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to VDD V On Resistance (RON) 0.65 Ω typ VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA; 0.72 0.8 0.88 Ω max Figure 18 0.04 Ω typ VDD = 2.3 V; VS = 0.55 V, IS = 10 mA On Resistance Match between Channels (∆RON) 0.08 0.085 Ω max On Resistance Flatness (RFLAT(ON)) 0.16 Ω typ VDD = 2.3 V; VS = 0 V to VDD, IS = 10 mA 0.23 0.24 Ω max LEAKAGE CURRENTS VDD = 2.7 V Source Off Leakage IS (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; ±1 ±6 ±35 nA max Figure 19 Drain Off Leakage ID (OFF) ±0.2 nA typ VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V; ±1 ±6 ±35 nA max Figure 19 Channel On Leakage ID, IS (ON) ±0.2 nA typ VS = VD = 0.6 V or 2.4 V; Figure 20 ±1 ±11 ±70 nA max DIGITAL INPUTS Input High Voltage, VINH 1.7 V min Input Low Voltage, VINL 0.7 V max Input Current, IINL or IINH 0.005 µA typ VIN = VINL or VINH ±0.1 µA max CIN, Digital Input Capacitance 6 pF typ DYNAMIC CHARACTERISTICS2 tON 22 ns typ RL = 50 Ω, CL = 35 pF 27 29 30 ns max VS = 1.5 V/ 0 V; Figure 21 tOFF 4 ns typ RL = 50 Ω, CL = 35 pF 6 7 8 ns max VS = 1.5 V; Figure 21 Break-Before-Make Time Delay (tBBM) 18 ns typ RL = 50 Ω, CL = 35 pF (ADG813 only) 5 ns min VS1 = VS2 = 1.5 V; Figure 22 Charge Injection 25 pC typ VS = 1.25 V, RS = 0 Ω, CL = 1 nF; Figure 23 Off Isolation –67 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 24 Channel-to-Channel Crosstalk –90 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 26 Total Harmonic Distortion (THD + N) 0.022 % RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 1.5 V p-p Insertion Loss –0.06 dB typ RL = 50 Ω, CL = 5 pF, f = 100 kHz –3 dB Bandwidth 90 MHz typ RL = 50 Ω, CL = 5 pF; Figure 25 CS (OFF) 32 pF typ CD (OFF) 37 pF typ CD, CS (ON) 60 pF typ POWER REQUIREMENTS VDD = 2.7 V IDD 0.003 µA typ Digital inputs = 0 V or 2.7 V 1.0 4 µA max 1 Temperature range for the Y version is –40°C to +125°C. 2 Guaranteed by design, not subject to production test. |
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