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SI4816DY-T1 数据表(PDF) 1 Page - Vishay Siliconix |
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SI4816DY-T1 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 8 page G2 S2 N-Channel 2 MOSFET Schottky Diode A G1 D1 N-Channel 1 MOSFET S1/D2 FEATURES D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested Si4816DY Vishay Siliconix Document Number: 71121 S-41697—Rev. E, 20-Sep-04 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) Channel-1 0.022 @ VGS =10 V 6.3 Channel-1 30 0.030 @ VGS =4.5 V 5.4 Channel 2 30 0.013 @ VGS =10 V 10 Channel-2 0.0185 @ VGS =4.5 V 8.6 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 G1 D1 A/S2 D2/S1 A/S2 D2/S1 G2 D2/S1 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4816DY Si4816DY-T1 (with Tape and Reel) Si4816DY—E3 (Lead (Pb)-Free) Si4816DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA =25_C UNLESS OTHERWISE NOTED) Channel-1 Channel-2 Parameter Symbol 10 secs Steady State 10 secs Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V Continuous Drain Current (TJ = 150_C)a TA =25_C ID 6.3 5.3 10 7.7 Continuous Drain Current (TJ = 150_C)a TA =70_C ID 5.4 4.2 8.2 6.2 Pulsed Drain Current IDM 30 40 A Continuous Source Current (Diode Conduction)a IS 1.3 0.9 2.2 1.15 Avalanche Currentb L = 0 1 mH IAS 12 25 Single Pulse Avalanche Energyb L= 0.1mH EAS 7.2 31.25 mJ Maximum Power Dissipationa TA =25_C PD 1.4 1.0 2.4 1.25 W Maximum Power Dissipationa TA =70_C PD 0.9 0.64 1.5 0.8 W Operating Junction and Storage Temperature Range TJ,Tstg --55 to 150 _C THERMAL RESISTANCE RATINGS Channel-1 Channel-2 Schottky Parameter Symbol Typ Max Typ Max Typ Max Unit Maximum Junction to Ambienta t ≤ 10 sec R 72 90 43 53 48 60 Maximum Junction-to-Ambienta Steady-State RthJA 100 125 82 100 80 100 _C/W Maximum Junction-to-Foot (Drain) Steady-State RthJC 51 63 25 30 28 35 C/ Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Starting date code W46BAA. |
类似零件编号 - SI4816DY-T1 |
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类似说明 - SI4816DY-T1 |
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