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SI3493DV-T1 数据表(PDF) 4 Page - Vishay Siliconix |
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SI3493DV-T1 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si3493DV Vishay Siliconix www.vishay.com 4 Document Number: 71936 S-41796—Rev. C, 04-Oct-04 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 24 40 8 16 Single Pulse Power Time (sec) 32 10−3 10−2 1 10 600 10−1 10−4 100 −0.2 −0.1 0.0 0.1 0.2 0.3 0.4 −50 −25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ − Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 360_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 1 100 600 10 10−1 10−2 TA = 25_C Safe Operating Area 100 1 0.1 1 10 100 0.01 10 0.1 TC = 25_C Single Pulse * rDS(on) Limited IDM Limited BVDSS Limited ID(on) Limited P(t) = 10 dc P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified |
类似零件编号 - SI3493DV-T1 |
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类似说明 - SI3493DV-T1 |
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