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SI1016X 数据表(PDF) 1 Page - Vishay Siliconix |
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SI1016X 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Si1016X Vishay Siliconix New Product Document Number: 71168 S-03104—Rev. A, 08-Feb-01 www.vishay.com 1 Complementary N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 N-Channel 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400 P-Channel –20 1.6 @ VGS = –2.5 V –300 2.7 @ VGS = –1.8 V –150 FEATURES BENEFITS APPLICATIONS D Very Small Footprint D High-Side Switching D Low On-Resistance: N-Channel, 0.7 W P-Channel, 1.2 W D Low Threshold: "0.8 V (typ) D Fast Swtiching Speed: 14 ns D 1.8-V Operation D Gate-Source ESD Protection D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation D Replace Digital Transistor, Level-Shifter D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers Marking Code: A Top View 3 1 D2 G2 S1 5 2 4 6 D1 S2 G1 SOT-563 SC-89 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel P-Channel Parameter Symbol 5 secs Steady State 5 secs Steady State Unit Drain-Source Voltage VDS 20 –20 Gate-Source Voltage VGS "6 V _ TA = 25_C 515 485 –390 –370 Continuous Drain Current (TJ = 150_C)a TA = 85_C ID 370 350 –280 –265 Pulsed Drain Currentb IDM 650 –650 mA Continuous Source Current (Diode Conduction)a IS 450 380 –450 –380 TA = 25_C 280 250 280 250 Maximum Power Dissipationa TA = 85_C PD 145 130 145 130 mW Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. |
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