STK5U4UF90D-E

www.onsemi.com

6

7.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Power output section

Collector-emitter leakage current

VCE = 1200 V

ICE

-

-

1

mA

Collector to emitter saturation voltage

IC = 15 A, Tj = 25

C

VCE(SAT)

-

(1.9)

TBD

V

IC = 15 A, Tj = 100

C

-

(2.0)

-

V

Diode forward voltage

IF = 15 A, Tj = 25

C

VF

-

(2.1)

TBD

V

IF = 15 A, Tj = 100

C

-

(2.2)

-

V

Junction to case thermal resistance

IGBT

θj-c(T)

-

(0.8)

TBD

C/W

FWD

θj-c(D)

-

(1.06)

TBD

C/W

Switching time

IC = 15 A, VCC = 600 V, Tj = 25°C

-

(0.2)

-

μs

-

(0.6)

-

μs

Turn-on switching loss

IC = 15 A, VCC = 600 V, Tj = 25°C

-

(1.2)

-

mJ

Turn-off switching loss

-

(0.5)

-

mJ

Total switching loss

-

(1.7)

-

mJ

Turn-on switching loss

IC = 15 A, VCC = 600 V, Tj = 100°C

-

(1.4)

-

mJ

Turn-off switching loss

-

(0.7)

-

mJ

Total switching loss

-

(2.1)

-

mJ

Diode reverse recovery energy

IC = 15 A, VCC = 600 V, Tj = 100°C

(di/dt set by internal driver)

-

(0.3)

-

mJ

Diode reverse recovery time

trr

-

(0.2)

-

μs

Driver Section

Gate driver power dissipation

VD1, 2, 3 = 15 V

ID

-

8

17

mA

VD4 = 15 V

-

24

51

mA

High level Input voltage

HINU to GNDU, HINV to GNDV, HINW

to GNDW; LINU, LINV, LINW to GND

VIN H

3.2

-

-

V

Low level Input voltage

VIN L

-

-

1.2

V

Logic 1 input current

VIN = 3.0 V

-

-

500

μA

Logic 0 input current

VIN = 1.2 V

-

-

100

μA

FAULT terminal output voltage

FoU, FoV, FoW, FoN Sink: 5 mA

VFL

-

0.2

1

V

FoU, FoV, FoW, FoN Source: 20 mA

VFH

12

13.3

-

V

Desaturation protection blanking time

tdeasatbl

-

2

-

μs

VD supply undervoltage

positive going input threshold

11.3

12

12.6

V

VD supply undervoltage

negative going input threshold

10.4

11

11.7

V

Bootstrap diode reverse current

VR(BD) = 1200 V

IR(BD)

-

-

1

mA

Bootstrap diode forward voltage

IF(BD) = 0.1 A

Including voltage drop by resistor

VF(BD)

-

(2.6)

-

V

Bootstrap current controlling resistor

RB

-

15

-

Ω