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STK5U4UCG0D-E 数据表(PDF) 5 Page - ON Semiconductor

部件名 STK5U4UCG0D-E
功能描述  Intelligent Power Module (IPM)
Download  14 Pages
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制造商  ONSEMI [ON Semiconductor]
网页  http://www.onsemi.com
标志 ONSEMI - ON Semiconductor

STK5U4UCG0D-E 数据表(HTML) 5 Page - ON Semiconductor

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5
ABSOLUTE MAXIMUM RATINGS at Tc = 25°C (Notes 1, 2)
1.
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
2.
Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for
Safe Operating parameters.
3.
This surge voltage developed by the switching operation due to the wiring inductance between VP and NU, NV, NW terminal.
4.
VD1 = VDU to GNDU, VD2 = VDV to GNDV, VD3 = VDW to GNDW, VD4 = VDN to GND
5.
Flatness tolerance of the heatsink should be within
50 m to +100 m.
RECOMMENDED OPERATING RANGES (Note 6)
6.
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to
stresses beyond the Recommended Operating Ranges limits may affect device reliability.
Rating
Symbol
Conditions
Value
Unit
Supply voltage
VCC
VP to NU, NV, NW, surge < 400 V
(Note 3)
450
V
Collector-emitter voltage
VCE
VP to U, V, W; U to NU, V to NV, W to NW
600
V
Self-protection supply
voltage limit (DESATP
capability)
VCC(SC)
VD1, 2, 3, 4 = between 13.5 V and 16.5 V,
Tj
≤ 150°C, up to “tdesatbl”, non-repetitive
400
V
Output current
Io
VP, NU, NV, NW, U, V, W terminal current
±75
A
Output peak current
Iop
VP, NU, NV, NW, U, V, W terminal current
pulse width 1 ms
±150
A
Gate driver supply voltages
VD
VDU to GNDU, VDV to GNDV, VDW to GNDW,
VDN to GND
(Note 4)
0.3 to VD
V
Input signal voltage
VIN
HINU to GNDU, HINV to GNDV, HINW to GNDW;
LINU, LINV, LINW to GND
0.3 to VD
V
FAULT terminal voltage
VFo
FoU to GNDU, FoV to GNDV, FoW to GNDW,
FoN to GND
0.3 to VD
V
Fault output
IFo
FoU, FoV, FoW, FoN Source current
25
mA
FoU, FoV, FoW, FoN Sink current
10
Maximum power dissipation
Pd
IGBT per channel
TBD
W
Junction temperature
Tj
IGBT, FRD
150
C
Storage temperature
Tstg
40 to +125
C
Operating case temperature
Tc
IPM case temperature
40 to +100
C
Package mounting torque
Case mounting screw M4
(Note 5)
1.17
Nm
Isolation voltage
Vis
50 Hz sine wave AC 1 minute
2500
V rms
Rating
Symbol
Conditions
Min
Typ
Max
Unit
Supply voltage
VCC
VP to NU, NV, NW
0
-
400
V
Gate driver supply voltage
VD1,2,3
VDU to GNDU, VDV to GNDV,
VDW to GNDW
12.6
15
17.5
V
VD4
VDD to GND
13.5
15
16.5
V
ON-state input voltage
VIN(ON)
HINU to GNDU, HINV to GNDV, HINW
to GNDW; LINU, LINV, LINW to GND
0
-
0.7
V
OFF-state input voltage
VIN(OFF)
3.3
-
15
V
PWM frequency
fPWM
1
-
20
kHz
Dead time
DT
Turn-off to Turn-on (external)
2
-
-
μs
Allowable input pulse width
PWIN
ON and OFF
1
-
-
μs
Package mounting torque
M4 type screw
0.79
-
1.17
Nm


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