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AD5160BRJ5-R2 数据表(PDF) 5 Page - Analog Devices |
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AD5160BRJ5-R2 数据表(HTML) 5 Page - Analog Devices |
5 / 16 page AD5160 TIMING CHARACTERISTICS—5 kΩ, 10 kΩ, 50 kΩ, 100 kΩ VERSIONS (VDD = +5V ± 10%, or +3V ± 10%; VA = VDD; VB = 0 V; –40°C < TA < +125°C; unless otherwise noted.) Table 3. Parameter Symbol Conditions Min Typ1 Max Unit SPI INTERFACE TIMING CHARACTERISTICS6, 10 (Specifications Apply to All Parts) Clock Frequency fCLK 25 MHz Input Clock Pulsewidth tCH, tCL Clock level high or low 20 ns Data Setup Time tDS 5 ns Data Hold Time tDH 5 ns CS Setup Time tCSS 15 ns CS High Pulsewidth tCSW 40 ns CLK Fall to CS Fall Hold Time tCSH0 0 ns CLK Fall to CS Rise Hold Time tCSH1 0 ns CS Rise to Clock Rise Setup tCS1 10 ns NOTES 1 Typical specifications represent average readings at +25°C and VDD = 5 V. 2 Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. 3 VAB = VDD, Wiper (VW) = no connect. 4 INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. VA = VDD and VB = 0 V. DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions. 5 Resistor terminals A, B, W have no limitations on polarity with respect to each other. 6 Guaranteed by design and not subject to production test. 7 Measured at the A terminal. The A terminal is open circuited in shutdown mode. 8 PDISS is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation. 9 All dynamic characteristics use VDD = 5 V. 10 See timing diagram for location of measured values. All input control voltages are specified with tR = tF = 2 ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V. ABSOLUTE MAXIMUM RATINGS1 (TA = +25°C, unless otherwise noted.) Table 4. Parameter Value VDD to GND –0.3 V to +7 V VA, VB, VW to GND VDD IMAX1 ±20 mA Digital Inputs and Output Voltage to GND 0 V to +7 V Operating Temperature Range –40°C to +125°C Maximum Junction Temperature (TJMAX) 150°C Storage Temperature –65°C to +150°C Lead Temperature (Soldering, 10 sec) 300°C Thermal Resistance2 θJA: MSOP-10 230°C/W NOTES 1 Maximum terminal current is bounded by the maximum current handling of the switches, maximum power dissipation of the package, and maximum applied voltage across any two of the A, B, and W terminals at a given resistance. 2 Package power dissipation = (TJMAX – TA)/θJA. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Rev. 0 | Page 5 of 16 |
类似零件编号 - AD5160BRJ5-R2 |
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类似说明 - AD5160BRJ5-R2 |
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