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SI1012X 数据表(PDF) 3 Page - Vishay Siliconix |
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SI1012X 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si1012R/X Vishay Siliconix New Product Document Number: 71166 S-02464—Rev. A, 25-Oct-00 www.vishay.com 3 TYPICAL CHARACTERISTICS (TA = 25_C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 0 4 8 12 16 20 0.60 0.80 1.00 1.20 1.40 1.60 –50 –25 0 25 50 75 100 125 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 0.0 0.8 1.6 2.4 3.2 4.0 0 200 400 600 800 1000 VDS – Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 10 V ID = 250 mA ID – Drain Current (mA) VGS = 4.5 V ID = 600 mA VGS = 1.8 V Gate Charge On-Resistance vs. Drain Current Qg – Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ – Junction Temperature (_C) 0 1 2 3 4 5 0123456 ID = 350 mA 1000 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) VGS = 4.5 V ID = 200 mA VGS = 2.5 V VGS = 1.8 V ID = 350 mA TJ = 125_C TJ = 25_C TJ = –55_C 10 100 |
类似零件编号 - SI1012X |
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类似说明 - SI1012X |
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