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K4S643232H Datasheet(数据表) 3 Page - Samsung semiconductor

部件型号  K4S643232H
说明  64Mb H-die (x32) SDRAM Specification
下载  12 Pages
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
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K4S643232H Datasheet(HTML) 3 Page - Samsung semiconductor

 
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CMOS SDRAM
- 3 -
SDRAM 64Mb H-die (x32)
Rev. 1.4 August 2004
The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated
with SAMSUNG
′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock.
I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable
latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
512K x 32Bit x 4 Banks SDRAM
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation
• DQM for masking
• Auto & self refresh
• 64ms refresh period(4K Cycle)
FEATURES
GENERAL DESCRIPTION
Part No.
Orgainization
Max Freq.
Interface
Package
K4S643232H-TC/L70
2Mb x 32
143MHz(CL=3)
LVTTL
86pin TSOP(II)
K4S643232H-TC/L60
166MHz(CL=3)
K4S643232H-TC/L55
183MHz(CL=3)
K4S643232H-TC/L50
200MHz(CL=3)
Ordering Information
Row & Column address configuration
Organization
Row Address
Column Address
2Mx32
A0~A10
A0-A7




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