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BZX585-B3V6 数据表(PDF) 6 Page - NXP Semiconductors |
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BZX585-B3V6 数据表(HTML) 6 Page - NXP Semiconductors |
6 / 10 page This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Table 2 Per type BZX585-B/C27 to B/C75 Tamb =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Notes 1. Device mounted on a FR4 printed-circuit board with approximately 35 mm2 Cu area at cathode tab. 2. Solder point at cathode tab. BZX585- BorC XXX WORKING VOLTAGE VZ (V) at IZtest =2mA DIFFERENTIAL RESISTANCE rdif (Ω) TEMP. COEFF. SZ (mV/K) at IZtest =2mA (see figs 3 and 4) DIODE CAP. Cd (pF) at f = 1 MHz; VR =0V NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs Tol. ± 2 % (B) Tol. ± 5 % (C) at I Ztest = 0.5 mA at IZtest =2mA MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX. 27 26.46 27.54 25.65 28.35 65 300 25 80 23.4 50 1.0 30 29.40 30.60 28.50 31.50 70 300 30 80 26.6 50 1.0 33 32.34 33.66 31.35 34.65 75 325 35 80 29.7 45 0.9 36 35.28 36.72 34.20 37.80 80 350 35 90 33.0 45 0.8 39 38.22 39.78 37.05 40.95 80 350 40 130 36.4 45 0.7 43 42.14 43.86 40.85 45.15 85 375 45 150 41.2 40 0.6 47 46.06 47.94 44.65 49.35 85 375 50 170 46.1 40 0.5 51 49.98 52.02 48.45 53.55 90 400 60 180 51.0 40 0.4 56 54.88 57.12 53.20 58.80 100 425 70 200 57.0 40 0.3 62 60.76 63.24 58.90 65.10 120 450 80 215 64.4 35 0.3 68 66.64 69.36 64.60 71.40 150 475 90 240 71.7 35 0.25 75 73.50 76.50 71.25 78.75 170 500 95 255 80.2 35 0.2 SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to ambient note 1 350 K/W Rth(j-s) thermal resistance from junction to solder point note 2 65 K/W |
类似零件编号 - BZX585-B3V6 |
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类似说明 - BZX585-B3V6 |
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