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SI4830DY Datasheet(数据表) 2 Page - Vishay Siliconix

部件型号  SI4830DY
说明  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
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SI4830DY Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si4830DY
Vishay Siliconix
www.vishay.com
2
Document Number: 71161
S-31989—Rev. C, 13-Oct-03
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED).
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
0.8
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 30 V VGS = 0 V
Ch-1
1
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V
Ch 1
Ch-2
100
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V VGS = 0 V TJ = 85_C
Ch-1
15
mA
VDS = 30 V, VGS = 0 V, TJ = 85_C
Ch 1
Ch-2
2000
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
20
A
Drain Source On State Resistanceb
rDS( )
VGS = 10 V, ID = 7.5 A
0.018
0.022
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = 4.5 V, ID = 6.5 A
0.024
0.030
W
Forward Transconductanceb
gfs
VDS = 15 V, ID = 7.5 A
22
S
Diode Forward Voltageb
VSD
IS = 1 A VGS = 0 V
Ch-1
0.8
1.2
V
Diode Forward Voltageb
VSD
IS = 1 A, VGS = 0 V
Ch 1
Ch-2
0.47
0.5
V
Dynamica
Total Gate Charge
Qg
13
20
Gate-Source Charge
Qgs
VDS = 15 V, VGS = 10 V, ID = 7.5 A
2
nC
Gate-Drain Charge
Qgd
DS
, GS
, D
2.7
Gate Resistance
Rg
0.5
3.2
W
Turn-On Delay Time
td(on)
8
16
Rise Time
tr
VDD = 15 V, RL = 15 W
10
20
Turn-Off Delay Time
td(off)
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
21
40
ns
Fall Time
tf
10
20
ns
Source Drain Reverse Recovery Time
t
IF = 1 7 A di/dt = 100 A/ms
Ch-1
40
80
Source-Drain Reverse Recovery Time
trr
IF = 1.7 A, di/dt = 100 A/ms
Ch 1
Ch-2
32
70
Notes
a.
Guaranteed by design, not subject to production testing.
b.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
VF
IF = 1.0 A
0.47
0.50
V
Forward Voltage Drop
VF
IF = 1.0 A, TJ = 125_C
0.36
0.42
V
Vr = 30 V
0.004
0.100
Maximum Reverse Leakage Current
Irm
Vr = 30 V, TJ = 100_C
0.7
10
mA
g
rm
Vr = -30 V, TJ = 125_C
3.0
20
Junction Capacitance
CT
Vr = 10 V
50
pF




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