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FQP32N12V2 数据表(PDF) 4 Page - Fairchild Semiconductor |
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FQP32N12V2 数据表(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page Rev. A, December 2003 ©2003 Fairchild Semiconductor Corporation Typical Characteristics (Continued) Figure 10. Maximum Drain Current vs Case Temperature 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse V DS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 175 o C 3. Single Pulse V DS, Drain-Source Voltage [V] 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 T C, Case Temperature [ ℃] Figure 9-1. Maximum Safe Operating Area for FQP32N12V2 Figure 9-2. Maximum Safe Operating Area for FQPF32N12V2 -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 16 A T J, Junction Temperature [ o C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature |
类似零件编号 - FQP32N12V2 |
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类似说明 - FQP32N12V2 |
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