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TPD4E001DPKR 数据表(PDF) 6 Page - Texas Instruments

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部件名 TPD4E001DPKR
功能描述  Low-Capacitance 4-Channel ESD-Protection for High-Speed Data Interfaces
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 TI1 - Texas Instruments

TPD4E001DPKR 数据表(HTML) 6 Page - Texas Instruments

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6
TPD4E001
SLLS682L – JULY 2006 – REVISED MAY 2016
www.ti.com
Product Folder Links: TPD4E001
Submit Documentation Feedback
Copyright © 2006–2016, Texas Instruments Incorporated
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 Thermal Information
THERMAL METRIC(1)
TPD4E001
UNIT
DRL
(SOT)
DBV
(SOT)
DCK
(SC70)
DPK
(USON)
DRS (SON)
6 PINS
6 PINS
6 PINS
6 PINS
6 PINS
RθJA
Junction-to-ambient thermal resistance
226.4
259.7
251.1
247.6
91.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
90.3
186.5
88.1
124.8
106.9
°C/W
RθJB
Junction-to-board thermal resistance
61.2
107.6
54.8
204.2
64.8
°C/W
ψJT
Junction-to-top characterization parameter
6.7
71.4
1.7
19.2
10.2
°C/W
ψJB
Junction-to-board characterization parameter
61.0
107.1
54.1
209.3
64.9
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
N/A
N/A
N/A
29.9
°C/W
(1)
Typical values are at VCC = 5 V and TA = 25°C.
(2)
Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to ICE61000-4-5.
6.6 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted), VCC = 5 V ±10%
PARAMETER
TEST CONDITIONS
MIN
TYP(1)
MAX
UNIT
VCC
Supply voltage
0.9
5.5
V
ICC
Supply current
1
100
nA
VF
Diode forward voltage
IF = 10 mA
0.65
0.95
V
VBR
Breakdown Voltage
IBR = 10 mA
11
V
VC
Channel clamp voltage
TA = 25°C, ±15-kV HBM,
IF = 10 A
Positive transients
VCC + 25
V
Negative transients
–25
TA = 25°C,
±8-kV Contact Discharge
(IEC 61000-4-2), IF = 24 A
Positive transients
VCC + 60
Negative transients
–60
TA = 25°C,
±15-kV Air-Gap Discharge
(IEC 61000-4-2), IF = 45 A
Positive transients
VCC + 100
Negative transients
–100
Surge strike on IO pin,
GND pin grounded,
IPP = 5A, 8/20 µs
(2)
Positive transients
17
VRWM
Reverse stand-off voltage
IO pin to GND pin
5.5
V
II/O
Channel leakage current
Vi/o = GND to VCC
±1
nA
CI/O
Channel input capacitance
VCC = 5 V, Bias of VCC/2; ƒ = 10 MHz
1.5
pF


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