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TPD1E1B04DPYR 数据表(PDF) 5 Page - Texas Instruments |
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TPD1E1B04DPYR 数据表(HTML) 5 Page - Texas Instruments |
5 / 17 page 5 TPD1E1B04 www.ti.com SLVSDL0A – MAY 2016 – REVISED JULY 2016 Product Folder Links: TPD1E1B04 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 6.6 Electrical Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VRWM Reverse stand-off voltage IIO < 100 nA –3.6 3.6 V VBRF Breakdown voltage, any IO pin to GND Measured as the maximum voltage before device snaps back into VHOLD voltage 6.4 V VBRR Breakdown voltage, GND to any IO pin Measured as the maximum voltage before device snaps back into VHOLD voltage –6.4 V VHOLD Holding voltage IIO = 1 mA, TA = 25°C 5 6 6.6 V VCLAMP Clamping voltage IPP = 1 A, TLP, from IO to GND 6.3 V IPP = 5 A, TLP, from IO to GND 6.8 IPP = 16 A, TLP, from IO to GND 8.5 IPP = 1 A, TLP, from GND to IO 6.3 IPP = 5 A, TLP, from GND to IO 6.8 IPP = 16 A, TLP, from GND to IO 8.5 ILEAK Leakage current, IO to GND VIO = ±2.5 V 0.2 100 nA RDYN Dynamic resistance IO to GND 0.15 Ω GND to IO 0.15 CL Line capacitance VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C 1 1.3 pF |
类似零件编号 - TPD1E1B04DPYR |
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类似说明 - TPD1E1B04DPYR |
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