GM72V66841CTSLASHCLT datasheet(5/57 Pages) LG

部件名	GM72V66841CT/CLT

功能描述	2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

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制造商	LG [LG Semicon Co.,Ltd.]

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LG Semicon

GM72V66841CT/CLT

Command Operation

Command Truth Table

* Notes : H: VIH, L: VIL, X: VIH or VIL, V: Valid address input

The synchronous DRAM recognizes the following commands specified by the CS, RAS, CAS, WE

and address pins.

Function

Ignore command

Symbol

CKE

No Operation

Burst stop in full page

Column address and

read command

Read with auto-Precharge

Write with auto-Precharge

Row address strobe and

bank active

Precharge all banks

Column address and

write command

CS

RAS

CAS

WE

A12~

A13

A10

A0~

A11

DESL

NOP

BST

READ

READ A

WRIT

WRIT A

ACTV

PALL

H

X

V

H

L

X

H

L

X

H

L

H

L

X

H

L

H

L

H

L

H

X

V

X

L

H

L

H

V

H

X

V

X

n-1

n

H

X

L

V

Mode register set

MRS

Refresh

REF/SELF

Precharge select bank

PRE

H

X

L

H

L

V

L

X

4

VSS and VSSQ

(Power supply pins)

Ground is connected. (VSS is for the internal circuit and VSSQ is for the output

buffer.)

NC

No Connection pins.

DESCRIPTION

Pin Name

VCC and VCCQ

(Power supply pins)

3.3 V is applied. (VCC is for the internal circuit and VCCQ is for the output

buffer.)

DQ0 ~ DQ7

(I/O pins)

Data is input and output from these pins. These pins are the same as those of a

conventional DRAM.

Pin Description(Continued)

类似零件编号 - GM72V66841CT/CLT

制造商	部件名	数据表	功能描述
Hynix Semiconductor	GM72V66841ELT-10K	90Kb / 10P	2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
	GM72V66841ELT-7	90Kb / 10P	2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
	GM72V66841ELT-75	90Kb / 10P	2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
	GM72V66841ELT-7J	90Kb / 10P	2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
	GM72V66841ELT-7K	90Kb / 10P	2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM

More results

类似说明 - GM72V66841CT/CLT

制造商	部件名	数据表	功能描述
OKI electronic componet...	MD56V62800A	367Kb / 28P	4-Bank x 2,097,152-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
Hynix Semiconductor	GM72V66841ET	90Kb / 10P	2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
OKI electronic componet...	MSM56V16400D	339Kb / 30P	2-Bank X 2,097,152-Word X 4-Bit SYNCHRONOUS DYNAMIC RAM
	MD56V62400	303Kb / 28P	4-Bank x 4,194,304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM
	MSM56V16800D	340Kb / 30P	2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
	MSM56V16800E	400Kb / 30P	2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
	MSM56V16800F	2Mb / 30P	2-Bank x 1,048,576 Word x 8 Bit SYNCHRONOUS DYNAMIC RAM
	MD56V62160	305Kb / 28P	4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
	MD56V62320	414Kb / 30P	4-Bank x 524,288-Word x 32-Bit SYNCHRONOUS DYNAMIC RAM
	MSC23S2640E	71Kb / 11P	2,097,152 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (1BANK):