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CS5212GDR14 数据表(PDF) 2 Page - ON Semiconductor |
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CS5212GDR14 数据表(HTML) 2 Page - ON Semiconductor |
2 / 16 page CS5212 http://onsemi.com 2 C16 0.1 µF GATE(H) BST LGND VFFB VFB COMP SGND PGND GATE(L) VC IS+ IS– VCC ROSC CS5212 U1 GN2 GND R8 10 C2 0.1 µF TP4 COMP TP5 BST 1 2 3 4 5 6 7 14 13 12 11 10 9 8 C11 0.1 µF R1 51 k C1 0.47 µF R9 10 C19 1.0 µF Q2 Q1 TP3 GATE(L) TP2 GATE(H) TP1 SWNODE VIN 3.3 V D5 BAT54S + + + C6 C7 C8 100 µF/10 V × 3 R5 4.7 k R13 10 C15 470 pF L1 2.9 µH 6.5 mR ETQP6F2R9LB VOUT GND C3 0.1 µF R6 4.7 k R2 10 TP6 SENSE+ TP7 SENSE– R4 1.0 k 1% C5 680 pF R3 1.5 k 1% R7 TBD* D6 BAT54S D2 BAT54S C4 0.1 µF C22 0.1 µF *Refer to Rpullup Value Selection section for value needed. + C9 + C10 100 µF/10 V × 2 + C20 + C21 Figure 1. Application Diagram, 3.3 V to 1.5 V/8.0 A Converter with Differential Remote Sense MAXIMUM RATINGS* Rating Value Unit Operating Junction Temperature, TJ 150 °C Lead Temperature Soldering: Reflow: (SMD styles only) (Note 1) 230 peak °C Storage Temperature Range, TS –65 to +150 °C Package Thermal Resistance: Junction–to–Case, RθJC Junction–to–Ambient, RθJA 30 125 °C/W °C/W ESD Susceptibility: Human Body Model Machine Model 2.0 200 kV V JEDEC Moisture Sensitivity 1 – 1. 60 second maximum above 183 °C. *The maximum package power dissipation must be observed. |
类似零件编号 - CS5212GDR14 |
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类似说明 - CS5212GDR14 |
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