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SI4965DY 数据表(PDF) 1 Page - Vishay Siliconix |
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SI4965DY 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 4 page Si4965DY Vishay Siliconix Document Number: 70826 S-31989—Rev. B, 13-Oct-03 www.vishay.com 1 Dual P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.021 @ VGS = -4.5 V -8.0 -8 0.027 @ VGS = -2.5 V -7.0 0.040 @ VGS = -1.8 V -5.8 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 S1 G1 D1 D1 P-Channel MOSFET S2 G2 D2 D2 P-Channel MOSFET Ordering Information: Si4965DY Si4965DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS -8 V Gate-Source Voltage VGS "8 V Continuous Drain Current (TJ = 150_C)a, b TA = 25_C ID -8.0 Continuous Drain Current (TJ = 150_C)a, b TA = 70_C ID -6.4 A Pulsed Drain Current IDM -30 A Continuous Source Current (Diode Conduction)a, b IS -1.7 Maximum Power Dissipationa, b TA = 25_C PD 2.0 W Maximum Power Dissipationa, b TA = 70_C PD 1.3 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction to Ambienta t v 10 sec R 62.5 _C/W Maximum Junction-to-Ambienta Steady State RthJA 93 _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. |
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