SI4810DY-T1 datasheet(4/5 Pages) VISHAY

部件名	SI4810DY-T1

功能描述	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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4 / 5 page

Si4810DY

Vishay Siliconix

www.vishay.com

2-4

Document Number: 70802

S-31062—Rev. F, 26-May-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.00

0.02

0.04

0.06

0.08

0.10

0

2468

10

ID = 9.0 A

0

20

40

60

80

0.01

0.10

1.00

10.00

2

1

0.1

0.01

10-4

10-3

10-2

10-1

110

30

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Reverse Current (Schottky)

TJ - Temperature (_C)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

Time (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 70_C/W

3. TJM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150_C

TJ = 25_C

50

1

0.1

10

125

150

0.0001

1

30

0

255075

100

10 V

0.001

0.01

0.1

10

20 V

30 V

类似零件编号 - SI4810DY-T1

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI4810BDY	53Kb / 5P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 26-May-03
Vishay Siliconix	SI4810BDY-T1	53Kb / 5P	N-Channel 30-V (D-S) MOSFET with Schottky Diode Rev. A, 26-May-03

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