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SI2307DS 数据表(PDF) 4 Page - Vishay Siliconix |
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SI2307DS 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 4 page Si2307DS Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70843 S-60570—Rev. A, 16-Nov-98 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.01 0.10 1.00 0.01 0 1 8 12 2 6 10 500 0.1 10 100 0.1 1.0 10.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 –0.4 –0.2 0.0 0.2 0.4 0.6 –50 –25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 02468 10 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) TJ – Temperature (_C) Time (sec) ID = –3 A ID = 250 mA TA = 25_C Single Pulse TJ = 25_C TJ = 150_C 2 10–3 10–2 1 10 500 10–1 10–4 100 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 4 |
类似零件编号 - SI2307DS |
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