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NLAS323 数据表(PDF) 4 Page - ON Semiconductor |
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NLAS323 数据表(HTML) 4 Page - ON Semiconductor |
4 / 10 page NLAS323 http://onsemi.com 4 ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) VCC Limit Symbol Parameter Condition V 25 °C Unit BW Maximum On−Channel −3dB Bandwidth VIS = 0 dBm 3.0 190 MHz BW Maximum On−Channel −3dB Bandwidth or Minimum Frequency Response VIS = 0 dBm VIS centered between VCC and GND 3.0 4.5 190 200 MHz or Minimum Frequency Res onse VIS centered between VCC and GND (Figures 6 and 14) 4.5 5.5 200 220 VONL Maximum Feedthrough On Loss VIS = 0 dBm @ 10 kHz 3.0 −2 dB VONL Maximum Feedthrough On Loss VIS = 0 dBm @ 10 kHz VIS centered between VCC and GND 3.0 4.5 −2 −2 dB VIS centered between VCC and GND (Figure 6) 4.5 5.5 2 −2 VISO Off−Channel Isolation f = 100 kHz; VIS = 1.0 V RMS 3.0 −93 dB VISO Off−Channel Isolation f = 100 kHz VIS = 1.0 V RMS VIS centered between VCC and GND 3.0 4.5 −93 dB VIS centered between VCC and GND (Figures 6 and 15) 4.5 5.5 Q Charge Injection VIS = VCC to GND, FIS = 20 kHz 3.0 1.5 Q Charge Injection Enable Input to Common I/O VIS = VCC to GND, FIS = 20 kHz tr = tf = 3.0 ns 3.0 5.5 1.5 3.0 pC Enable In ut to Common I/O tr tf 3.0 ns RIS = 0 W, CL = 1000 pF QC * DV 5.5 3.0 C IS L Q = CL * DVOUT (Figures 6 and 16) (Figures 6 and 16) THD Total Harmonic Distortion FIS = 20 Hz to 1 MHz, RL = Rgen = 600 W, CL = 50 pF 3.3 0.3 % THD Total Harmonic Distortion THD + Noise FIS = 20 Hz to 1 MHz, RL = Rgen = 600 W, CL = 50 F VIS = 3.0 VPP sine wave 3.3 5.5 0.3 0.15 % THD + Noise VIS 3.0 VPP sine wave VIS = 5.0 VPP sine wave (Fi 17) 5.5 0.15 IS PP (Figure 17) −55 1.00E+03 5 1.00E−01 −15 −35 1.00E−04 Figure 3. Switch Leakage vs. Temperature 1.00E+05 INO(OFF) TEMPERATURE ( °C) 1.00E−03 1.00E−02 1.00E+00 1.00E+02 1.00E+04 25 45 1.00E−05 1.00E−06 1.00E−07 1.00E+01 65 85 105 125 145 ICOM(ON) ICOM(OFF) |
类似零件编号 - NLAS323 |
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类似说明 - NLAS323 |
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