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SI9111DY-T1 数据表(PDF) 5 Page - Vishay Siliconix

部件名 SI9111DY-T1
功能描述  High-Voltage Switchmode Controllers
Download  8 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI9111DY-T1 数据表(HTML) 5 Page - Vishay Siliconix

  SI9111DY-T1 Datasheet HTML 1Page - Vishay Siliconix SI9111DY-T1 Datasheet HTML 2Page - Vishay Siliconix SI9111DY-T1 Datasheet HTML 3Page - Vishay Siliconix SI9111DY-T1 Datasheet HTML 4Page - Vishay Siliconix SI9111DY-T1 Datasheet HTML 5Page - Vishay Siliconix SI9111DY-T1 Datasheet HTML 6Page - Vishay Siliconix SI9111DY-T1 Datasheet HTML 7Page - Vishay Siliconix SI9111DY-T1 Datasheet HTML 8Page - Vishay Siliconix  
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BIAS
FB
+VIN
COMP
SENSE
RESET
OUTPUT
SHUTDOWN
−VIN
VREF
VCC
DISCHARGE
OSC OUT
OSC IN
Dual-In-Line and SOIC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Si9110/9111
Vishay Siliconix
Document Number: 70004
S-42037—Rev. H, 15-Nov-04
www.vishay.com
5
PIN CONFIGURATIONS AND ORDERING INFORMATION
ORDERING INFORMATION
Part Number
Temperature Range
Package
Si9110DY
Si9110DY-T1
Si9110DY-T1—E3
SOIC-14
Si9111DY
SOIC-14
Si9111DY-T1
−40 to 85_C
Si9111DY-T1—E3
−40 to 85_C
Si9110DJ
Si9110DJ-—E3
PDIP 14
Si9111DJ
PDIP-14
Si9111DJ-—E3
DETAILED DESCRIPTION
Pre-Regulator/Start-Up Section
Due to the low quiescent current requirement of the
Si9110/9111 control circuitry, bias power can be supplied from
the unregulated input power source, from an external
regulated low-voltage supply, or from an auxiliary “bootstrap”
winding on the output inductor or transformer.
When power is first applied during start-up, +VIN (pin 2) will
draw a constant current. The magnitude of this current is
determined by a high-voltage depletion MOSFET device
which is connected between +VIN and VCC (pin 6). This
start-up circuitry provides initial power to the IC by charging an
external bypass capacitance connected to the VCC pin. The
constant current is disabled when VCC exceeds 8.6 V. If VCC is
not forced to exceed the 8.6-V threshold, then VCC will be
regulated to a nominal value of 8.6 V by the pre-regulator
circuit.
As the supply voltage rises toward the normal operating
conditions, an internal undervoltage (UV) lockout circuit keeps
the output driver disabled until VCC exceeds the undervoltage
lockout threshold (typically 8.1 V). This guarantees that the
control logic will be functioning properly and that sufficient
gate drive voltage is available before the MOSFET turns on.
The design of the IC is such that the undervoltage lockout
threshold will be at least 300 mV less than the pre-regulator
turn-off voltage. Power dissipation can be minimized by
providing an external power source to VCC such that the
constant current source is always disabled.
Note:
During start-up or when VCC drops below 8.6 V the
start-up circuit is capable of sourcing up to 20 mA. This may
lead to a high level of power dissipation in the IC (for a 48-V
input, approximately 1 W). Excessive start-up time caused by
external loading of the VCC supply can result in device
damage. Figure 6 gives the typical pre-regulator current at
BiC/DMOS as a function of input voltage.
BIAS
To properly set the bias for the Si9110/9111, a 390-kW resistor
should be tied from BIAS (pin 1) to −VIN (pin 5). This
determines the magnitude of bias current in all of the analog
sections and the pull-up current for the SHUDOWN and
RESET pins. The current flowing in the bias resistor is
nominally 15 mA.
Reference Section
The reference section of the Si9110 consists of a temperature
compensated buried zener and trimmable divider network.
The output of the reference section is connected internally to
the non-inverting input of the error amplifier. Nominal reference
output voltage is 4 V. The trimming procedure that is used on
the Si9110 brings the output of the error amplifier (which is
configured for unity gain during trimming) to within "1% of 4 V.
This compensates for input offset voltage in the error amplifier.
The output impedance of the reference section has been
purposely made high so that a low impedance external voltage
source can be used to override the internal voltage source, if
desired, without otherwise altering the performance of the device.


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